Estimation of the electrical characteristics of PIN diode after Proton-Irradiated based on Monte carlo code

Estimation of the Electrical Characteristics of PIN diode after
Proton-Irradiated based on Monte Carlo code
Hoang Sy Minh Tuan1, *
1

Institute of Applied Technology - Thu Dau Mot University, 6, Tran Van On, Phu Hoa
Ward, Thu Dau Mot City, Binh Duong, Vietnam, 820000
*

Abstract
The present study describes the correlation between radiation damages and electrical properties
of the PIN diode after irradiation of the energy proton. The PN diodes were irradiated at
difference irradiation energies of 5.26, 7.2, and 8.67 MeV with the proton doses of 1 × 1010, 1 ×
1011, and 1 × 1012 cm-2. The final 3D distribution of the ions and all kinetic phenomena
associated with the ion energy loss, such as vacancies, sputtering, ionization, and phonon
production, can be estimated using the calculation packages (SRIM/TRIM). The findings show
that the penetration of protons into the PN diode leads to lattice defects in the form of vacancies,
defect clusters, and dislocations. As to the ionization effects in the PN diode, the total ionizing
dose and single event effects were also calculated. In practical terms, the capacitance-voltage and
current-voltage characteristics of the PN diode after irradiation has been measured to deduce the
correlation between the damage creations and the electrical properties.

Tóm tắt
Nghiên cứu hiện tại mô tả mối tương quan giữa thiệt hại bức xạ và tính chất điện của diode PIN
sau khi chiếu xạ proton năng lượng. Các điốt PN được chiếu xạ ở năng lượng chiếu xạ khác
nhau là 5,26, 7,2 và 8,67 MeV với liều proton 1 × 1010,1 × 1011 và 1 × 1012 cm-2. Sự phân bố 3D
cuối cùng của các ion và tất cả các hiện tượng động học liên quan đến mất năng lượng ion,
chẳng hạn như vị trí lỗ trống, phún xạ, ion hóa và sản xuất phonon, có thể được ước tính bằng
cách sử dụng các gói tính tốn (SRIM/TRIM). Các phát hiện cho thấy sự xâm nhập của proton
vào diode PN dẫn đến việc sản xuất các khuyết tật mạng lưới dưới dạng vị trí tuyển dụng, cụm
khuyết tật và trật khớp. Đối với các hiệu ứng ion hóa trong diode PN, tổng liều ion hóa và hiệu

ứng sự kiện đơn cũng được tính tốn. Về mặt thực tế, các đặc tính điện áp điện áp và điện áp
dòng điện của diode PN sau khi chiếu xạ đã được đo để suy ra mối tương quan giữa các sáng tạo
thiệt hại và các tính chất điện.
Keywords: Radiation damage; SRIM/TRIM; Proton; Semiconductor device.

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1. Introduction
The structural product made up of electronic semiconductor components is widely
applied in life, especially in electronics, communication, industries, etc., especially in mobile
devices, computers, automobiles, etc. Contributing much to the development of semiconductor
component revenue development is applied in data processing, communication, electronic
consumption. Besides, the semiconductor components are susceptible to the effects of radiation.
However, they are the fundamental components of electronic circuits in high-radiation devices
such as radiation measurement systems at nuclear power plants or research reactors, radiology
machines at medical centers, semiconductor and microchip components used in satellites or
spacecraft, military applications, and more. Therefore, the study of the effect of radiation in
semiconductors is a broad and complex topic. Assessing the operational characteristics and
tolerance of semiconductor components in radiation environments is interesting to scientists
worldwide.
During irradiation, the duration of projection can be controlled by the dose of radiation,
for which the dose of radiation can be measured correctly by controlling the flow intensity
during irradiation. Irradiation is the cause of reduced survival time of minority lead particles and
reverse recovery time in semiconductor devices. The degree of reduction depends on the form,
energy, and fluence of the radiation used. The irradiation will also increase the voltage drop, an
essential parameter in high-pressure devices. Incoming voltage drop is an essential factor in
high-energy devices, as it will determine the loss of heat in the device during conduction. When
a material is irradiated with high-energy radiation, the forms' defects play the role of reunion
centers and reduce the electrical bearing particle. Most applications of diodes require a minimum

voltage change to an incoming voltage drop with a change in switching time. Diodes can achieve
this by high-energy radiation. The correct dose to reduce the desired switching time can be found
by irradiating the diodes in different doses.
There are numerous studies [1, 2] on various aspects of displacement due to displacement
and its effect on semiconductor materials and devices when irradiated that have been conducted
for Ge semiconductors [3] and Si [4]. At the same time, electronic characteristics are sensitive to
shifting errors in the Si and Ge semiconductors when irradiated [5]. Studies of the radiation
effect on semiconductor devices sensitive to displacement are conducted with bipolar transistors,
solar cells, and charging docking devices (CCDs). Many of the papers presented at the NSREC
conference [6] have been incorporated into shifting error effects in bulk semiconductor materials,
diodes, solar cells and other photoelectric devices, microwave devices, JFE (Junction FieldEffect transistors), bipolar transistors, and semiconductor balls of elemental integrated circuits
(TTL) and ECL (Emitter-Coupled Logic). In addition, the articles mention the wrong effects of
displacement in solar cells, GaAs devices, particle detectors, diodes, and bipolar transistors.
During the 1993-2003 period, many topics were covered, including shifting error effects in bulk
semiconductor materials, bipolar technology, solar cells, photoelectric machines, possible
imaging arrays, infrared devices, SiC devices, GaAs devices, InP devices, LED (Light-Emitting
Diodes), laser diodes, particle detectors, HEMT (High Electronic Mobility Transistors),
photodiodes and GaN. Other areas to be dealt with include NIEL (Non-Ionizing Energy Loss)
identification, false correlation, and synergistic effects of ionizing radiation and shifting error. In
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the most recent period (2003-2018), studies focused on shift error effects in SDRAM
(Synchronous Dynamic Random-Access Memories) and memory devices. In addition, there are
fundamental analyses and calculations of errors caused by displacement and its effects. During
this period, the study focused on shift error, the correlation of effects on devices produced by
different particles (electrons, protons, and neutrons) that are considered essential keys to
understanding the mechanism of failure [7],[8].
Due to their particular structure with some superior features, PIN diodes should often be
applied in high voltage rectifying, optical sensor devices, or in RF applications that degrade and

switch elements. However, PIN diodes have the characteristic that poor reverse recovery time
contributes to power loss. The use of proton beams projected onto the PIN diode to assess the
PIN diode's characteristics and increase the diode's recovery time is considered. The study aims
to assess the properties of PIN diodes caused by the radiation effect of beaming proton beams at
different energy levels and dosages. PIN diodes are specifically designed in Korea, followed by
proton irradiation samples at the University of Natural Sciences of Hanoi National University.
The diode samples were then measured for I-V and C-V characteristic curves at the Ho Chi Minh
City High-Tech Park. The measurement of the specific routes of the PIN diode before and after
the proton projection will give us a visual view of the effect of the distance caused by the proton
beam on the PIN diode.
2. Methods
The irradiated properties of electrons, protons, and fast neutrons are summarized in Table
1. Electron and proton acceleration beams are commonly used. The energy electrons make the
errors evenly in the material. The majority of recoil atoms can redemptively combine their
vacant position, which is explained because the recoiling atoms remain around their original
network position because of the small electron's small drive. Protons effectively create defects by
shifting enough momentum to network atoms to recede from their original positions, although
the failures are local because of their inherent braking yield at Bragg Peak before stopping
completely. Electronic and proton irradiation methods improve the characteristics of the
conversion.
Table 1: Compare radiation beams in adjusting the lifetime of load particles.
Radiation Damage

Source

Electron

Gamma

Proton

Neutron

Acceleration

Co-60

Acceleration

Reactor

10 keV~
Energy

0.4~10 MeV

~ 1.33 MeV

1.5~15 MeV
10 MeV
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Effect granny

Electron

Electronic

Proton

Fast neutrons

By depth

Uniform

Compton
Almost

Almost evenly

evenly
Misdistributed
Cathode

N+

Cathode

N-

Anode

N+
N-

P+
Anode

P+

2.1 Overview of SRIM/TRIM
SRIM (Stopping and Range of Ions in Matter) is a well-known computer program for
calculating the interaction of ions in matter. The core of the simulation software is TRIM
(TRansport of Ions in Matter), a Monte Carlo computer program developed by James F. Ziegler
that calculates the interaction of energetic ions with amorphic targets. TRIM is a group of
programs that effectively calculate ions' braking and running yield (10 eV ( 2 GeV/amu) based
on statistical algorithms. TRIM software became popular due to its easy-to-use user interface,
where input parameters can be systematically adjusted. Different types of calculations and
outputs can be selected. They are displayed and saved as cells or lists of parameters. The
program package contains tables and charts related to the experimentally determined run and
braking productivity for the most common materials.
SRIM/TRIM is widely used to calculate the process parameters involved in ion
implantation and ion irradiation in the material. This program is used to calculate how much
radiation is destroyed by ion radiation, i.e., shifting per atom (DPA). In the field of radiation
damage, DPA is widely used as a standard unit for damage caused by the original radiation, so
researchers introducing ion beams of radiation damage need to know how to use SRIM. In this
study, SRIM/TRIM is used to investigate the loss of ionizing energy and proton running
distances in diode PIN components.
2.2 Design and order the production of PIN diodes
The PIN diode used to project protons within the framework of this thesis was designed
and manufactured at the Electric and Telecommunications Research Institute (ETRI) [9] in
Korea with structures (Figures 1 and 2) and the following parameters:

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Figure 1. Design structure and size of PIN diodes.
The PIN diode produced from the p-type Si FZ (TO-5) Si FZ wafer has a crystal presence

of 111 and impeding is 150 .m with the parameters in Table 2. Si FZ is a very pure Si produced
by vertical region melting. Compared to the Czochralski method, the crystals of Si FZ have
higher purity. Due to the low impurities in the Si FZ wafer, it is easy to control defects and
increase mechanical intensity. Si FZ has a very high yield distribution, used primarily in probes.
The N adjoin is formed by phosphorus diffusion with a depth of 3.6 μm. The SiO2 pole has a
thickness of 700 nm. The two diode sides with metal contact with the upper side are Al with a
thickness of 2 μm, and the underside is Cr (50 nm) or Au (80nm)
Table 2: The parameters of the wafer Si FZ used to make the PIN diode.
Material

FZ-Si

Size (cm)

10.16

Direction

(111)

Thickness (μm)

400 ± 10

Dop

Phosphorus

Impedism (.m)

50 - 5000

Polishing

Two sides

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Figure 2. The actual shape of the PIN diode is made at the ETRI Institute.
a. Experimental
After fabrication, the PIN diode samples were sent to the University of Natural Sciences
of Hanoi National University irradiated with proton beams with 1010, 1011 and 1012 proton
dosage levels.cm-2, respectively. SRIM/TRIM is used to calculate the PKA and DPA values for
PIN diodes with proton energy levels and fluctuating. Pin diode samples after proton projection
are brought to the Center for Research and Deployment of The High-Tech Park under the
Management Board of ho Chi Minh City High-Tech Park to measure the parameters. Keithley's
I-V model 4200 SCS special line measurement system (USA) is equipped at the Center for
Research and Deployment of Hi-Tech Park under the Management Board of Ho Chi Minh City
Hi-Tech Park. A world-class computer controls the Keithley 4200 system, and the DC series via
the model is up to 210V/100 mA with a current resolution of 0.1 fA (Figure 3). The signals and
currents obtained from the sample during the measurement are transmitted to the computer, and
the KTEI software will process, display, and receive the measurement process. This Keithley
4200 measuring system has been standard in component measurement, semiconductor
microchip, with the advantages: high accuracy and stability, the current is measured to pA, so it
is possible to accurately measure the current value especially with components with a very thin
film of several nm, capable of exporting data or analyzing directly using integrated software.

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Figure 3. I-V model 4200 SCS V specialline measurement system at the Center for
Research and Deployment of Hi-Tech Park.
3. Results and Discussions
Figure 4 describes the direction of proton projection for PIN diodes with different energy
levels and dosages. The proton energy levels selected for PIN diode projection are 5.26; 7.2, and
8.67 MeV at the implant channel of the 5SDH-2 Pelletron accelerator with dosage levels of 1010,
1011, and 1012 proton.cm-2, respectively. Pin diode models are placed in the projection chamber
with 8 × 10-9 torr pressure. The PIN diode is mounted on a vertical metal ladder that allows
direct contact with the beam and avoids energy loss during projection. The irradiation is
performed at room temperature with projection doses from 1010 to 1012 proton.cm-2. The beam
always maintains the flow strength at 100 mA to avoid thermal effects. A 2× 2 mm 2 beam is
scanned on 12 × 12 mm2 using a magnetic scanner for uniform irradiation of diodes.

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Figure 4. The model describes the direction of proton projection for PIN diodes with
different energy levels and quantities.
3.1 Use SRIM/TRIM software to calculate the PKA and DPA values for PIN diodes with proton
energy levels and flum throughput.
Since SRIM/TRIM software can only simulate pencil beams, it is necessary to incorporate
an SRIM-Supporting Software Module (SSSM) program to simulate an experimental proton
beam. This is a program capable of creating an ion beam with characteristic parameters (Figure
5).

Figure 5. Simulation of incoming proton beams using the TRIM program in combination
with SSSM: (a) Standard TRIM Simulation, (b) Emission diagram of the beam generated; (c)
Simulation of the actual size of the beam; (d) Simulation of the chromatic effect.
3.2 The results calculated the scattering of the lost energy of the proton beam until the PIN diode

with a thickness of 400 μm.
To understand the degradation in PIN diodes when projecting protons, it is necessary to
analyze the effect of proton projection on the device structure and the role of the associated
energy loss mechanism Se. Elastic collisions with nuclei known as S loss nuclear power, which
is preeminent with about 1 keV/amu; and non-elastic collisions of protons with the atomic
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electrons of diodes known as loss electrons, which dominate at the energy of about 1 MeV/amu
or more. In insatiable collisions (category ~10-16 cm2), energy is transferred from protons to Si
atoms in diodes through stimulating and ionizing surrounding electrons. Electronic energy loss in
each collision varies from tens of eV to a few keV per Angstrom. The energy loss of protons is
much smaller than the electronic energy loss in the diode's Si material due to the more negligible
elastic scattering. As a result, the maximum energy accumulated for the material is mainly due to
the loss of electronic energy during passage through the Si material.

Figure 6. Proton beam simulation
Figure 6 describes proton energy levels of 5.26; 7.2 and 8.67 MeV were selected for
irradiation because based on trim software simulation results, the lost energy dispersion is within
the thickness of the PIN diode and stops at the P+, P zone, P-N+ intersection of PIN diodes
(Table 3). Proton beams irradiate the diodes with energy (Ep) of 5.26, 7.2, 8.67 MeV, and proton
dosages are changed from 1×1010, 1×.1011, 1×1012 cm−2 per energy value.

Table 3: Proton energy dispersion zone in PIN diode with different energy levels.

Energy

Depth

Projection

(MeV)

(µm)

5.26

230

P+ Zone

Back

7.20

320

Diode Center (P zone)

Back

8.67

400

AdjojomingN+-P-

Back

Location

direction

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3.3 The number of DPA generated by PKA is calculated in TRIM with an Ed energy of 15 eV
(Figure 7):

Figure 7. The correlation between DPA and PKA with Ed energy is 15 eV.
3.4 The number of DPA generated by PKA is calculated in TRIM with an Ed energy of 15 eV
(Figure 8):

Figure 8. Mis-distributed in PIN diodes for 5.26 energy proton beams; 7.2 and 8.67 MeV.

3.5 The number of DPA generated by PKA is calculated in TRIM with an Ed energy of 15 eV
(Figure 9):

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Figure 9. The wrong distribution in THE PIN diode in 3D for incoming proton energy is 5.26
and 7.20 MeV. The graph is drawn using TRIM software.

3.6 The DPA distribution in THE PIN diode is calculated by simulation via TRIM software
(Figure 10):

Figure 10. DPA distribution in PIN diodes is calculated using TRIM software.

3.7 I-V characteristic curves of PIN diodes

The I-V characteristic curves are measured using the Keithley 4200 system connected to a
computer via KEI software to measure PIN diode patterns before and after proton projection.
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The I-V special gland before and after irradiation is measured by changing the V voltage from 0
to 1.2 V.

(a)

(b)

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(c)
Figure 11. I-V characteristic curves of PIN diodes with proton projection dose of (a) 1010cm2
, (b) 1011cm-2, (c) 1012cm-2.

Figure 11 shows that the lower the energy level, the higher the I-V of the PIN diode. With
projection power levels of 7.2 and 8.67 at the 1012projection dose, the characteristic curves are
almost horizontal, and the PIN diode is destroyed. The threshold voltage (Vth) is determined
when the I series strength is 1 mA and is used to characterize PIN diodes before and after proton
projection. We have the results of Vth before and after irradiation (Table 4).
Table 4: Threshold voltage (Vth) before and after proton projection with different projection
doses.

Proton

Energy Vth (V)

(MeV)

1010 cm-2

1011 cm-2

1012 cm-2

non-irradiation

0.9

0.9

0.9

5.26

0.84

0.84

0,84

7.2

0.85

1.00

Destroy

8.67

0.88

1.04

Destroy

Based on the results obtained in Table 4 when measuring I-V special glands with different
proton projection doses and proton energy levels of 5.26, 7.2, and 8.67 MeV. We see that with a
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proton projection dose of 1010 cm-2, the Vth value before the proton projection is 0.9 V, while
after the projection, Vth decreases to 0.84; 0.85 and 0.88 V respectively for the projected energies
of 5.26; 7.2 and 8.67 MeV. For proton projection doses of 1011 cm-2, the Vth value before proton
projection is 0.9 V. After the screening, Vth decreased to 0.84 V with an energy of 5.26 MeV but
increased to 1 and 1.04 V respectively with projected energies of 7.2 and 8.67 MeV. For proton
projection doses of 1012 cm-2, the Vth value before proton projection is 0.9 V. After the screening,
Vth decreased to 0.89 V with an energy of 5.26 MeV. The PIN diode is destroyed with projection
power levels of 7.2 and 8.67 MeV. The change in Vth threshold voltage can be explained by the
appearance of traps at the adjoining layerS SiO2 and Si born after proton projection. Traps form
in the energy region of Si because of the decline in Si's flexibility and alter the resistance of
diodes.
3.8 I-V characteristic curves of PIN diodes
The leakage current of the -2 V reverse voltage is measured by reverse voltage for PIN
diodes. The result is that IL increases with increased energy and proton projection dose.

(a)

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(b)

(c)
Figure 12: I1L leakage flow of PIN diodes with proton projection dose of 1010 cm-2, (b) 1011
cm-2, (c) 1012 cm-2.
The observed Table 5 results may be caused by proton radiation in the SiO2 layer of the
contiguity region that increases the recombination velocity of the surface. The charge in the
oxide increases the diode surface voltage causing the rate of diode recombination to increase as
electron concentrations and holes become equivalent. Therefore, the switching speed of the PIN
diode decreases due to a decrease in voltage with increased leakage current.
Table 5: I211L leakage flow of PIN diodes before and after proton projection with different
projection dose levels.
Proton Energy (MeV)
non-irradiation

IL (nA)
1010 cm-2

1011 cm-2

1012 cm-2

0.25

0.25

0.25

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5.26

3.2

3.29

3.97

7.2

3.26

4.29

4.95

8.67

4.59

4.98

7.58

3.9 C-V characteristic curves of PIN diodes

(a)

(b)

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(c)
Figure 13. The C-V characteristic curves of the PIN diode with a proton projection dose of (a)
1010 cm-2, (b) 1011 cm-2, (c) 1012 cm-2.
The C-V characteristic curves are analyzed to test the change in doped concentration
according to energy levels and proton doses (Figure 13). The voltage range used to measure C is
from -5 0 V with a band of 1kHz. The C-V specific measurement results show that with proton
energy of 8.67 MeV, the C-V special route is different from the rest of the projected energy
levels.
4. Conclusions
Simulated error parameters when projecting protons onto a PIN diode with proton energy
levels of 5.26, 7.2, 8.67 MeV and proton dosages were changed from 1×1010, 1×1011, 1×1012
cm−2 per energy value.
I-V, C-V characteristic curves and IL and Vth values have been measured, and through the
obtained values, it is possible to assess the effect of proton beams on PIN diodes with different
energy levels and dosages.
The results obtained and the arguments are consistent with published studies
demonstrating the reliability of these study results.
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