physics, chemistry and application of nanostructures. reviews and short notes to nanomeeting 2003, 2003, p.596

Physics, Chemistry
a n d Application
of Nanostructures
Reviews and Short Notes to Nanomeeting 2003

#

*«

1

1
1
Editors
V. E. Borisenko
S. V. Gaponenko
V. S. Gurin

World Scientific


Physics, Chemistry
a n d Application
of Nanostructures
Reviews and Short Notes to Nanomeeting 2003


This page is intentionally left blank


Physics, Chemistry

a n d Application
of Nanostructures
Reviews and Short Notes to Nanomeeting 2003

Minsk, Belarus

20 - 23 May 2003

Editors

V. E. Borisenko
Belarusian State University of Informatics and Radioelectronics, Belarus

S. V. Gaponenko
Institute of Molecular and Atomic Physics, Belarus

V. S. Gurin
Belarusian State University, Belarus

V | f e World Scientific
wb

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A catalogue record for this book is available from the British Library.

PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES
Reviews and Short Notes to Nanomeeting 2003
Copyright © 2003 by World Scientific Publishing Co. Pte. Ltd.
All rights reserved. This book, or parts thereof, may not be reproduced in any form or by any means,
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Printed in Singapore by World Scientific Printers (S) Pte Ltd


INTERNATIONAL CONFERENCE
HANOMEEVNG-200Z
Minsk, Belarus, May 20-23, 2003

ORGANIZERS
Belarusian State University of Informatics and Radioelectronics
(Minsk, Belarus)
and
Universite de la Mediterranee Aix-Marseille II
(Marseille, France)

v


INTERNATIONAL ORGANIZING COMMITTEE
V. E. Borisenko - Co-chairman
F. Arnaud d'Avitaya- Co-chairman
L. J. Balk
E. V. Buzaneva
J. Derrien
S. V. Gaponenko
B. W. Licznerski
L. W. Molenkamp
H. Morisaki
A. Nassiopoulou
S. Ossicini
K. A. Valiev

(Belarus)
(France)
(Germany)
(Ukraine)
(France)
(Belarus)
(Poland)
(Germany)
(Japan)
(Greece)
(Italy)
(Russia)

BELARUSIAN NATIONAL ORGANIZING COMMITTEE
P. I. Brigadin - Chairman
M. P. Batura
V. E. Borisenko
V. S. Gurin
L. I. Ivanenko
F. F. Komarov
V. A. Labunov
A. A. Leshok
V. V. Nelaev

VI


FOREWORD
The first years of the XXI-st century have brought new fundamental knowledge and
novel applications of nanostructures. Nanoelectronics and nanophotonics,
bioinformatics and molecular electronics are extensively progressing on the basis of
recent achievements in nanotechnology. The results obtained are discussed at
NMOMeemc;-2001 (20-23 May, 2003), which is the International Conference on
Physics, Chemistry and Application of Nanostructures traditionally organized each
two years in Minsk (Belarus).
The book that you keep in your hands collects invited reviews and short notes
of contributions to NANOMEEWG-2001. The papers in the book are arranged in
traditional sections: Physics of Nanostructures, Chemistry of Nanostructures,
Nanotechnology and Nanostructure Based Devices. Both basic and applied
researches are presented. Among different results characterizing our knowledge
about the nanoworld, one can note an increased interest to Ge/Si quantum dot
systems, photonic crystals, carbon nanostructures, biological molecules,

self-scrolled semiconductors, epitaxial GaAIN onto Si. Their indeed astonishing
properties promise a birth of novel approaches to information processing. Scanning
probe techniques and nanochemistry, self-organization and self-assembling have got
new i mpetus to be applied in nanotechnology. The examples can be found in the
book. The style of the presentations has been mainly preserved in its original form.
We deeply acknowledge Sponsors provided the financial support for the
Conference.
Victor E. Borisenko
Francois Arnaud dAvitaya

Minsk and Marseille
January 2003

Co-chairmen of NANOMEE11NC;-2001

VII


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CONTENTS
Foreword

vii

PHYSICS OF NANOSTRUCTURES
Si/SiGe nanostructures: challenges and future perspectives (invited)
D. Grutzmacher
Spin resolved inverse photoemission from layered magnetic

nanostructures (invited)
R. Bertacco, L. Dud, M. Marcon, M. Portalupi, F. Ciccacci
Nonlinear optical properties of one-dimensional photonic
crystals (invited)
C. Sibilia, G. D 'aguanno, M. Centini, M. C. Larciprete,
M. Bertolotti, M. Scalora, M. Bloemer

3

11

19

Tunable three-dimensional photonic crystals based on opal-V0 2
composites (invited)
V. G. Golubev

24

Interband transitions in Si nanostructures within effective mass
approximation (invited)
X. Zianni, A. G. Nassiopoulou

32

Photoluminescence of Er 3+ ions in opal/tellurite glass composite
nanostructures
A. V. Gur'yanov, M. I. Samoilovich, M. Yu. Tsvetkov,
E. B. Intushin, Yu. I. Chigirinskii

39

Time-resolved luminescence of europium complexes in bulk and
nanostuctured dielectric media
E. P. Petrov, D. A. Ksenzov, T. A. Pavich, M. I. Samoilovich,
A. V. Gur'yanov
Synchrotron investigations of electron-energy spectra in silicon
nanostructures
E. P. Domashevskaya, V. A. Terekhov, V. M. Kashkarov,
E. Yu. Manukovskii, S. Yu. Turishchev, S. L. Molodtsov,
D. V. Vyalikh, A. F. Khokhlov, A. I. Mashin, V. G. Shengurov,
S. P. Svetlov, V. Yu. Chalkov

IX

43

47


Strain-induced photoluminescence red shift of InGaAs /GaAs
microtubes
A. V. Vorob'ev, V. Ya. Prinz, A. I. Toropov, A. A. Lutich,
A. A. Gaiduk, S. V. Gaponenko, D. Grutzmacher

51

Effects of doping and nonradiative defects in GaAs superlattices
V. K. Kononenko, D. V. Ushakov, H. W. Kunert

55

Scattering matrix approach to large-scale photonic crystal circuits
S. Mingaleev, K. Busch

59

Asymptotic analysis of radiation pattern of a classical dipole in a photonic
crystal: photon focusing caustics
D. N. Chigrin, C. M. Sotomayor Torres

64

Conservation laws for the integrated density of states in arbitrary quarterwave multilayer nanostructures
68
S. V. Zhukovsky
Peculiarities of light transformation in finite three-layered periodic
nanostructures
S. N. Kurilkina, M. V. Shuba
Laser pulse compression in Fibonacci multilayer nanostructures
L. N. Makarava, S. V. Zhukovsky, A. V. Lavrinenko
Synthesis of thin film titania photonic crystals through
an infiltrating sol-gel process
S. Kuai, X. Hu, G. Bader, S. Badilescu, V. V. Truong
FTIR study of vertically etched silicon as ID photonic crystal
V. Tolmachev, E. Astrova, T. Perova
Large optical anisotropy of ID photonic crystal fabricated
by vertical etching of silicon
E. V. Astrova, V. A. Tolmachev, A. D. Remenyuk, T. S. Perova
J. K. Vij, R. A. Moore

Strain-induced self assembling of nanovoids in Si/SiGe
multi-layer structures
P. I. Gaiduk, J. Lundsgaard Hansen, A. Nylandsted Larsen

x

72

76

80

84

88

92


Optical diagnostics of nanometer dielectric Alms by combining
ellipsometry and differential reflectance
P. Adamson

96

Photonic and nonlinear-optical media based on nanostructured
semiconductors
P. K. Kashkarov

100

Optical properties of multilayer heterostructures based on ZnSe/ZnS
P. I. Kuznetsov, G. G. Yakushcheva, V. I. Kovalev, M. V. Ermolenko

103

Confined optical vibrations in ZnSe quantum dots
107
A. I. Belogorokhov, L. I. Belogorokhova, V. Yu. Timoshenko, P. K. Kashkarov
Intradot carrier relaxation in radiation-damaged InGaAs/GaAs
quantum dot heterostructures
A. Cavaco, M. C. Carmo, N. A. Sobolev, F. Guffarth, H. Born,
R. Heitz, A. Hoffmann, D. Bimberg

Ill

Enhanced photoluminescence of Tb3+ and Eu3+ induced by energy
transfer from Sn0 2 and Si nanocrystallites
H. Elhouichet, L. Othman, A. Moadhen, M. Oueslati, M. Ferid,
B. Canut, J. A. Roger

115

Whispering gallery mode emission from a core-shell system of CdTe
nanocrystals on a spherical microcavity
Yu. P. Rakovich, J. F. Donegan, N. Gaponik, A. L. Rogach

120

Photoluminescence up-conversion in CdTe nanocrystals

K. I. Rusakov, A. A. Gladyshchuk, D. Talapin, A. Eychmuller
Enhanced photoluminescence of semiconductor nanocrystals
near metal colloids
O. S. Kulakovich, M. V. Artemyev, A. Yaroshevich, S. Maskevich
Evolution of optical phonons in CdSe/ZnS quantum dots:
Raman spectroscopy
A. V. Baranov, T. S. Perova, A. Moore, Yu. P. Rakovich,
J. F. Donegan, D. Talapin
Non-linear optical properties of IV-VI semiconductor quantum dots
A. M. Malyarevich, V. G. Savitsky, N. N. Posnov, K. V. Yumashev,
A. A. Lipovskii, E. Raaben, A. A. Zhilin

XI

124

12$

132

136


Synchrotron investigations of electron-energy spectra in
III-V nanostructures
E. P. Domashevskaya, V. A. Terekhov, V. M. Kashkarov,
S. Yu. Turishchev, S. L. Molodtsov, D. V. Vyalikh, Zh. I. Alferov,
I. N. Arsentyev, I. S. Tarasov, D. A. Vinokurov, V. P. Ulin

140

Luminescence of Ge/Si quantum dots subjected to radiation
damage and hydrogen passivation
A. Fonseca, J. P. Leitao, H. Presting, H. Kibbel

144

Raman scattering of zeolites under low-intense visible excitation:
role of reduced Cu cluster incorporated in zeolites pores
N. Strekal, V. Petranovskii

148

Surface plasmon resonances and light selection in metal-dielectric
nanostructures of various spatial arrangement
A. D. Zamkovets, S. M. Kachan, A. N. Ponyavina

151

Optical nonlinearity of copper nanoparticles synthesized by ion
implantation in silicate glass
A. L. Stepanov, R. A. Ganeev, A. I. Ryasnyansky, T. Usmanov

155

The optical response of silver island films embedded in fluoride
and oxide optical materials
O. Stenzel, P. Heger, N. Kaiser

158

Properties of nano-sized particles formed during double-pulse
laser ablation in liquids
163
V. A. Ageev, V. S. Burakov, A. F. Bokhonov, S. N. Isakov, M. I. Nedel'ko,
V. A. Rozantzev, N. V. Tarasenko
Mn photoluminescence kinetics in quantum dots
L. I. Gurinovich
Field enhancement near the annealed nanostructured gold
detected by optical spectroscopy with the probe biomolecules
N. Strekal, V. Askirka, S. Maskevich, I. Sveklo, I. Nabiev

167

171

Planar Cu nanostructure: experimental and theoretical integral
light scattering characteristics
175
A. Ya. Khairullina, T. I. Ol'shanskaya, V. A. Babenko, V. M. Kozhevin,
D. A. Yavsin, S. A. Gurevich, S. M. Kachan

xii


High-order harmonic generation by carbon nanotubes: density matrix
approach
G. Ya. Slepyan, S. A. Maksimenko, A. A. Khrutchinski,
A. M. Nemilentsau, J. Hermann
Mechanical properties of nanostructured amorphous

carbon-metal
films
V. V. Uglov, Y. Pauleau, F. Thiery, J. Pelletier, V. M. Anishchik,
A. K. Kuleshov, M. P. Samtsov, S. N. Dub
Electronic structure of metallic single-wall carbon nanotubes:
tight-binding versus free-electron approximation
N. A. Poklonski, E. F. Kislyakov, S. L. Podenok
Conductivity of metal - linear carbon chains with metal
inclusions - metal structures
D. G. Kolomiets, O. M. Ivanyuta, A. D. Gorchinskiy,
E. V. Buzaneva, P. Scharff

178

182

186

190

Influence of Si(lll)-[(V3xV3)/30°]-Cr surface phase on growth and
conductivity of disordered iron 2D layers on Si(lll)
Af. G. Galkin, S. A. Dotsenko, S. Ts. Krivoshchapov, D. L. Goroshko

194

Modelling vertical tunneling in semiconductor multiple quantum well
structures: effect of the disorder in layer parameters
A. V. Dmitriev, O. V. Pupysheva

198

Electronic properties of nanocrystalline chromium disilicide
V. L. Shaposhnikov, A. E. Krivosheev, A. B. Filonov
Conductivity oscillations during formation of disordered 2D Yb layers
on Si(l 11)
N. G. Galkin, S. A. Dotsenko, D. L. Goroshko, S. A. Gouralnik,
A. N. Boulatov
Anisotropy of energy spectrum and transport properties of 2D
carriers in uniaxially strained GaAs/AIGaAs
E. V. Bogdanov, N. Ya. Minina, A. V. Polyanskiy, A. M. Savin,
O. P. Hansen, C. B. Sorensen
The photon-assisted transport in mesoscopic devices
A. H Aly

Xlll

201

206

210

214


Electron beam scattering from potential fluctuations in a
two-dimensional electron gas
E. G. Novik, H. Buhmann, L. W. Molenkamp
Correlation of morphology and electrical conduction in

nanostructured perylene pigment films
A. N. Lappo, A. V. Misevich, A. E. Pochtenny, O. M. Stukalov,
G. K. Zhavnerko
Effect of doping concentration on the electron-phonon coupling
in degenerate silicon film
P. Kivinen, A. Savin, P. Torma, J. Pekola, M. Prunnila, J. Ahopelto

219

223

227

Conduction of nanowires formed between metallic electrodes
W. Nawrocki, M. Wawrzyniak

231

Oxidized silicon nanoclusters: a theoretical study
M. Luppi, S. Ossicini

235

About the impurity effect in the Si0 2 :nc-Si system
D. I. Tetelbaum, O. N. Gorshkov, S. A. Trushin, A. N. Mikhaylov,
D. G. Revin, D. M. Gaponova, S. V. Morozov, G. A. Kachurin,
S. G. Yanovskaya

239

Composite nanostructures based on porous silicon host
V. Bondarenko, G. Troyanova, M. Balucani, A. Ferrari

244

Nanoporous anodic oxide on aluminum - titanium alloys
5. K. Lazarouk, A. A. Leshok

249

Birefringence and photonic band gap in porous alumina films
V. A. Melnikov, G. M. Zaitsev, L. A. Golovan, V. Yu. Timoshenko,
P. K. Kashkarov, S. A. Gavrilov, D. A. Kravchenko

253

Anisotropic light scattering by porous anodic alumina
A. A. Lutich, I. S. Molchan

256

Photoluminescence excitation spectroscopy of erbium incorporated
with iron in oxidized porous silicon
V. Bondarenko, N. Kazuchits, M. Balucani, A. Ferrari
Impurity states in implanted porous anodic alumina
N. N. Cherenda, G. V. Litvinovich, A. L. Danilyuk

xiv

260

264


Evidence for energy transfer between Eu and Tb in
porous silicon matrix
A. Moadhen, H. Elhouichet, B. Canut, C. S. Sandu, M. Oueslati,
J. A. Roger
Electroluminescent xerogels fabricated in porous anodic alumina
/. S. Molchan, N. V. Gaponenko, D. A. Tsyrkunov, J. Misiewicz,
R. Kudrawiec, V. Lambertini, P. Repetto
Periodic nanostructures fabricated by anodic oxidation
of valve metal films
V. Sokol, A. Vorobyova, E. Outkina
Optical spectroscopy of porous composites with Si nanocrystals
A. Gorchinskiy
Magnetic properties of nanoparticles formed in sol-gel films
by ion irradiation or thermal processing
J. C. Pivin, E. Vincent

268

273

277

281

285

Deposition of nanoparticles on a cold substrate from a laminar gas flow
S. P. Fisenko, A. I. Shnip

291

Commensurate long-period nanostructures in alloys
S. V. Eremeev, O. I. Velikokhatnyi, I. I. Naumov, A. I. Potekaev,
V. V. Kulagina, V. N. Udodov

294

Chromatic polarization conversion of terahertz radiation by
a density-microstructured two-dimensional electron system
V. V. Popov, O. V. Polischuk
Exciton-phonon coupling of localized quasi-2D excitons
in semiconductor quantum well heterostructures
/. V. Bondarev, S. A. Maksimenko, G. Ya. Slepyan,
I. L. Krestnikov, A. Hoffmann
Lattice matching between bulkRu 2 Si 3 and nanocrystalline RuSi2

298

302

306

L. I. Ivanenko, V. L. Shaposhnikov, E. A. Krushevski
CHEMISTRY OF NANOSTRUCTURES
Nanocluster superlattices grown at solution surfaces (invited)
S. Sato, S. Wang, S. Kinugasa, H. Yao, K. Kimura

xv

313


Excitonics of I-VII semiconductors (invited)
C. S. Sunandana
Photoluminescence studies on CdS nanoclusters fabricated
in Langmuir-Blodgett films
E. A. Bagaev, K. S. Zhuravlev, L. L. Sveshnikova,
I. A. Badmaeva, S. M. Repinsky
Immunolabeling of membrane proteins and cells by highly
fluorescent cadmium selenide nanocrystals
M. Artemyev, V. Oleinikov, D. Klinov, I. Bronstein, W. Offen,
A. Sukhanova, J. Devy, H. Kaplan, I. Nabiev
Luminescent coding by quantum dots: microcapsules loaded with
semiconductor nanocrystals
A. Rogach, N. Gaponik, I. Radtchenko, H. Weller
In vitro bioactivity testing of Z r 0 2 nanopowders prepared by
MW-assisted hydrothermal synthesis
F. Bondioli, S. Braccini, C. Leonelli, G. C. Pellacani,
G. Lusvardi, G. Malavasi
Copper nanoparticles within amorphous and crystalline
dielectric matrices
V. S. Gurin, D. L. Kovalenko, V. P. Petranovskii
UV-visible characterization of gold clusters and nanoparticles
in beta zeolite
/. Tuzovskaya, N. Bogdanchikova, M. Avalos, A. Simakov,
A. Pestryakov

320

328

331

335

338

342

346

Manganese carbonate particles preparation by colloidal aggregation
for hollow polyelectrolyte capsules fabrication
Yu. A. Fedutik, A. A. Antipov, G. B. Sukhorukov

349

Impurity molecule trapping in growth of nanoparticles by
deposition from gas phase
V. V. Levdansky, J. Smolik, P. Moravec

353

Formation of nanopores and coagulation of nanograins
in cemented tin films
T. N. Vorobyova, A. S. Tselesh

357

xvi


Comparative DFT calculations of silver clusters
V. E. Matulis, O. A. Ivashkevich

361

DFT calculations of copper clusters
V. E. Matulis, O. A. Ivashkevich

365

Electrochemical deposition of metal selenide clusters on
selenium surface
D. K. Ivanov, N. P. Osipovich, S. K. Poznyak, E. A. Streltsov

369

Investigation of monolayers by potentiodynamic electrochemical
impedance spectroscopy
G. A. Ragoisha, A. S. Bondarenko

373

Self-forming of silicon surface nanorelief near edges of chemical
masks during anisotropic etching
K. A. Soldatenko, A. V. Yukhnevich

377

Formation of silver nanoparticles from a (2,3-dyhydroxy-4,6-di-tertbutylphenylthio-)acetic acid silver complex
M. C. Parfenova, V. E. Agabekov, A. A. Chernyavskaya,
N. V. Loginova, G. I. Polozov

381

Formation of thin sol-gel nanocomposite Ag-Ge0 2 films
S. V. Serezhkina, G. P. Shevchenko, S. K. Rakhmanov

385

Sol-gel synthesis of Fe-containing silica glasses
A. A. Boiko, E. N. Poddenezhny, V. A. Boiko, L. V. Sudnik

389

Structure and optical properties of CdSexTei.x in glass matrix
/ V. Bodnar, V. S. Gurin, A. P. Molochko, N. P. Solovei

392

Formation and optical properties of ultrafine I-III-VI2 particles
in silicate glass matrices
/. V. Bodnar, A. P. Molochko, N. P. Solovei

396

Structure evolution during laser sintering of fine powders
M. K. Arshinov, A. N. Tolochko

400

Peculiarities of electrochemical synthesis of nanosized Si0 2 films
/. L. Baranov, L. S. Stanovaya, L. V. Tabulina

403

xvn


Inorganic particles formation in nanoengineered polymer capsules
D. G Shchukin, G. B. Sukhorukov
Nanocrystalline perovskite-like Sr-Ba-Fe-Co oxides: stability
under reducing conditions
M. I. Ivanovskaya, L. S. Ivashkevich, A. S. Lyakhov, 1.1. Azarko,
V. V. Zyryanov, N. F. Uvarov
Synthesis and behavior of monomolecular films from
2,4-heneicosanedione and its metallocomplex
/. V. Paribok, G. K. Zhavnerko, V. E. Agabekov, T. Ondarcuhu
Cluster mechanisms of nanocrystal formation
N. K. Tolochko, A. Z. Myaldun
Multimode SPM methods for nanometer resolution study
of Langmuir-Blodgett films
L. V. Kukharenko, G. K. Ilyich, V. M. Anishchik, V. V. Grushevski,
G. V. Krylova

407

411

415

419

425

Structure and nanohardness of PVD composite nanosized Ti-Zr-N films
429
V. V. Uglov, V. V. Khodasevich, S. V. Zlotski, Zh. L. Prikhodko, S. N. Dub
Synthetic approach for preparation of nanometer-sized non-linear
optical advanced materials
V. V. Lisnyak, N. V. Stus, R. M. Barabash, S. A. Alekseev,
M. S. Slobodyanik, P. Popovich, D. Stratiychuk

433

NANOTECHNOLOGY
Germanium quantum dots in Si02: fabrication and
characterization (invited)
A. Nylandsted Larsen, A. Kanjilal, J. Lundsgaard Hansen, P. Gaiduk,
N. Cherkashin, A. Claverie, P. Normand, E. Kapelanakis, D. Tsoukalas,
K.-H. Heinig

439

Mechanisms of island vertical alignment in Ge/Si(001) quantum-dot
multilayers (invited)

V. Le Thanh

447

Enhanced luminescence of lanthanides from xerogels in
porous anodic alumina (invited)
N. V. Gaponenko

460

xvm


Advanced scanning probes as applied to self organized organic
systems (invited)
H. Fuchs

468

New precise nanostructures: semiconductor shells and their
well ordered arrays
V. Ya. Prinz

471

Characterization of nanocrystalline silicon films by beam induced
current in the scanning tunneling microscope
E. Nogales, B. Mendez, J. Piqueras, R. Plugaru

475

Pulsed laser annealing of germanium nanoclusters in silicon
V. A. Volodin, A. V. Dvurechenskii, M. D. Efremov, A. I. Nikiforov,
A. I. Yakimov, E. I. Gatskevich, G. D. Ivlev, D. A. Orehov
Regular structures on silicon surface formed under compression
plasma flow
V. M. Astashynski, S. I. Ananin, V. V. Askerko, E. A. Kostyukevich,
A. M. Kuzmitski, S. P. Zhvavy, J. Puric, M. M. Kuraica, I. Dojcinovic,
I. R. Videnovic
Nanosculptor software for fabrication of spatial structures in crystals
R. Trochimczuk, S. Karpovich
Rapid thermal processing of porous silicon for the structure
stabilization
V. A. Yakovtseva, A. V. Bondarenko
Nano-scale surface replication by polymer layers: SPM and X-ray
investigations
S. V. Gaponov, B. A. Gribkov, V. L. Mironov, N. N. Salashchenko,
S. A. Treskov, D. G. Volgunov
Self-organization phenomena in pulsed laser annealed Si/Ge
superlattices
JV. A. Sobolev, G. D. Ivlev, E. I. Gatskevich, D. N. Sharaev,
J. P. Leitdo, A. Fonseca, M. C. Carmo, A. B. Lopes,
V. V. Shvartsman, A. L. Kholkin, H. Kibbel, H. Presting

xix

478

481

485

488

492

496


AFM investigation of highly ordered nanorelief formation by anodic
treatment of aluminum surface
S. A. Gavrilov, V. M. Roschin, A. V. Zheleznyakova, S. V. Lemeshko,
B. N. Medvedev, R. V. Lapshin, E. A. Poltoratsky, G S. Rychkov,
N. N. Dzbanovsky, N. N. Suetin
Quasi-ID channels in Si delta-doped GaAs grown on vicinal
(111)A GaAs substrates
V. A. Rogozin, V. A. Kulbachinskii, V. G. Kytin, R. A. Lunin,
A. V. Derkach, I. S. Vasil'evskii, G. B. Galiev, V. G. Mokerov
Nucleation of superconducting phase in multilayered nanostructures
S. L. Prischepa, V. N. Kushnir, M. L. Delia Rocca, C. Attanasio
Ceramic filter materials with graded micro/nanoporous structure
fabricated by laser sintering
N. K. Tolochko, M. K. Arshinov

500

503

507

512

NANOSTRUCTURE BASED DEVICES
InGaN/GaN quantum wells: fabrication, optical properties and
application in light emitting devices (invited)
G. P. Yablonskii
Carbon nanotubes in microelectronic applications (invited)
F. Kreupl, G. S. Duesberg, A. P. Graham, M. Liebau, E. Unger,
R. Seidel, W. Pander, W. Honlein
Quantum-confined impurities as single-atom quantum dots:
application to terahertz emitters (invited)
P. Harrison, M. P. Halsall, W. -M. Zheng, J. -P. R. Wells,
I. V. Bradley, M. J. Steer
InGaN/GaN quantum well heterostructures grown on silicon for
UV-blue lasers and light emitting diodes
G. P. Yablonskii, E. V. Lutsenko, A. L. Gurskii, V. N. Pavlovski,
V. Z. Zubialevich, H. Kalisch, A. Szymakowski, Y. Dikme,
R. H. Jansen, J. F. Woitok, B. Schineller, M. Heuken
Electrical properties of DNA-based switching diode
J. A. Berashevich, A. B. Filonov, V. E. Borisenko

xx

517

525

533

541

545


Nano-size Sn0 2 films deposited by SILD method: structural and
gas response characterization
G Korotcenkov, V. Macsanov, V. Brinzari, V. Tolstoy, J. Schwank
Electrical conductivity and electroluminescence of planar nanocomposite
structures: gold island film - aluminum oxyquinoline
R. D. Fedorovich, T. A. Gavrilko, A. A. Marchenko, O. V. Mirzov,
V. B. Nechytaylo, G. A. Puchkovskaya, L. V. Viduta, A. G. Vitukhnovsky,
A. G. Naumovets
Textured porous silicon for efficient light detection in UV, VIS
and NIR spectrum ranges
N. N. Vorozov, V. A. Yakovtseva, S. A. Volchek, P. S. Smertenko,
T. Ya. Gorbach, V. P. Kostyhv

549

553

557

Relaxation processes in rare Earth doped crystals as studied by high
resolution fourier spectroscopy (invited)
M. N. Popova, B. Z. Malkin

560

Author index

569

xxi


PHYSICS OF NANOSTRUCTURES


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PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES, 2003

INVITED
Si/SiGe NANOSTRUCTURES: CHALLENGES AND FUTURE
PERSPECTIVES
D. GRUTZMACHER
Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut
CH-5232 Villigen-PSI Switzerland
E-mail: detlev.gruetzmacher@psi. ch
Embedding SiGe and Ge quantum structures into the Si host crystal opens up new paths for
the integration of ultra fast electronic and opto-electronic devices into the mature Si microelectronics. In this paper some of these paths are discussed and the challenging problems of
materials research are addressed. Special emphasis is put on the Dot-FET concept and on the
possibility of light emission from Si/SiGe quantum structures.

1

Introduction

In 1952 H. Welker discovered the semiconducting properties of III/V compounds
[1], leading to a lot of enthusiasm about future applications. Today, these materials
dominate clearly the market for opto-electronic devices and are widely used for high
speed microelectronics [2,3]. In fact, the appearance of III/V semiconductors was an
additional stimulation for the development of ever faster and smaller Si devices. In
particular, the concept of hetero- and quantum well structures opening the field of
band gap engineering, was extremely fruitful for the progress of III/V opto-electronic and high frequency devices [4]. With the introduction of SiGe this path became also available for the Si technology. The invention of the Si/SiGe heterobipolar transistor (HBT), allowed the design of Si based high frequency devices and
HBTs exceeding transit frequencies of 200 GHz have been realized [5]. These devices now enter the domain of wireless communication technology, even though for
high end applications III/V devices are still superior [6]. More recently, Si channels
with tensile strain embedded in a relaxed SiGe lattice draw a lot of attention, due to
the high electron mobility in the strained Si and the potential compatibility with Si
CMOS technology [7]. Thus, SiGe technology has entered the roadmap for the development of future generations of Si microprocessors. However, several obstacles
have to be circumvented before this technology may become available. Typically, a
heavily dislocated SiGe buffer layer is introduced to account for the lattice mismatch between the Si substrate and the relaxed SiGe film, which carries the strained
Si layer [8]. The high amount of threading dislocations, the reduced thermal conductivity of SiGe compared to Si and the necessity to integrate p- and n-type
devices on the same chip certainly are challenging problems for this technology.

3