1Background
ApplicationReport
SPRAAR7–December2007
USB2.0BoardDesignandLayoutGuidelines
DSPSApplications
ABSTRACT
Thisdocumentdiscussesschematicguidelineswhendesigningauniversalserialbus
(USB)system.
Contents
1Background 1
2USBPHYLayoutGuide 2
3ElectrostaticDischarge(ESD) 8
4References 10
ListofFigures
1SuggestedArrayCapacitorsandaFerriteBeadtoMinimizeEMI 2
2Four-LayerBoardStack-Up 3
3USBConnector 4
43WSpacingRule 4
5PowerSupplyandClockConnectiontotheUSBPHY 5
6USBPHYConnectorandCableConnector 6
7DoNotCrossPlaneBoundaries 7
8DoNotOverlapPlanes 7
9DoNotViolateImagePlanes 8
ClockfrequenciesgeneratethemainsourceofenergyinaUSBdesign.TheUSBdifferentialDP/DMpairs
operateinhigh-speedmodeat480Mbps.Systemclockscanoperateat12MHz,48MHz,and60MHz.
TheUSBcablecanbehaveasamonopoleantenna;takecaretopreventRFcurrentsfromcouplingonto
thecable.
WhendesigningaUSBboard,thesignalsofmostinterestare:
•Deviceinterfacesignals:Clocksandothersignal/datalinesthatrunbetweendevicesonthePCB.
•Powergoingintoandoutofthecable:TheUSBconnectorsocketpin1(VBUS)maybeheavily
filteredandneedonlypasslowfrequencysignalsoflessthan~100KHz.TheUSBsocketpin4
(analogground)mustbeabletoreturnthecurrentduringdatatransmission,andmustbefiltered
sparingly.
•Differentialtwistedpairsignalsgoingoutoncable,DPandDM:Dependinguponthedatatransferrate,
thesedeviceterminalscanhavesignalswithfundamentalfrequenciesof240MHz(highspeed),6
MHz(fullspeed),and750kHz(lowspeed).
•Externalcrystalcircuit(deviceterminalsXIandX0):12MHz,19.2MHz,24MHz,and48MHz
fundamental.Whenusinganexternalcrystalasareferenceclock,a24MHzandhighercrystalis
highlyrecommended.
Alltrademarksarethepropertyoftheirrespectiveowners.
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2USBPHYLayoutGuide
2.1GeneralRoutingandPlacement
2.2SpecificGuidelinesforUSBPHYLayout
2.2.1Analog,PLL,andDigitalPowerSupplyFiltering
Analog
PowerSupply
SoCBoard
FerriteBead
Digital
PowerSupply
FerriteBead
0.1µF
0.01µF
0.001µF
10µF
0.1µF
0.01µF
0.001µF
10µF
USBPHYLayoutGuide
ThefollowingsectionsdescribeindetailthespecificguidelinesforUSBPHYLayout.
UsethefollowingroutingandplacementguidelineswhenlayingoutanewdesignfortheUSBphysical
layer(PHY).Theseguidelineshelpminimizesignalqualityandelectromagneticinterference(EMI)
problemsonafour-or-morelayerevaluationmodule(EVM).
•PlacetheUSBPHYandmajorcomponentsontheun-routedboardfirst.Formoredetails,see
Section2.2.3.
•Routethehigh-speedclockandhigh-speedUSBdifferentialsignalswithminimumtracelengths.
•Routethehigh-speedUSBsignalsontheplaneclosesttothegroundplane,wheneverpossible.
•Routethehigh-speedUSBsignalsusingaminimumofviasandcorners.Thisreducessignal
reflectionsandimpedancechanges.
•Whenitbecomesnecessarytoturn90°,usetwo45°turnsoranarcinsteadofmakingasingle90°
turn.Thisreducesreflectionsonthesignaltracesbyminimizingimpedancediscontinuities.
•DonotrouteUSBtracesunderornearcrystals,oscillators,clocksignalgenerators,switching
regulators,mountingholes,magneticdevicesorIC’sthatuseorduplicateclocksignals.
•Avoidstubsonthehigh-speedUSBsignalsbecausetheycausesignalreflections.Ifastubis
unavoidable,thenthestubshouldbelessthan200mils.
•Routeallhigh-speedUSBsignaltracesovercontinuousplanes(V
CC
orGND),withnointerruptions.
Avoidcrossingoveranti-etch,commonlyfoundwithplanesplits.
ThefollowingsectionsdescribeindetailthespecificguidelinesforUSBPHYLayout.
TominimizeEMIemissions,adddecouplingcapacitorswithaferritebeadatpowersupplyterminalsfor
theanalog,phase-lockedloop(PLL),anddigitalportionsofthechip.Placethisarrayasclosetothechip
aspossibletominimizetheinductanceofthelineandnoisecontributionstothesystem.Ananalogand
digitalsupplyexampleisshowninFigure1.Incaseofmultiplepowersupplypinswiththesamefunction,
tiethemuptoasinglelow-impedancepointintheboardandthenaddthedecouplingcapacitors,in
additiontotheferritebead.ThisarrayofcapsandferritebeadimproveEMIandjitterperformance.Take
bothEMIandjitterintoaccountbeforealteringtheconfiguration.
Figure1.SuggestedArrayCapacitorsandaFerriteBeadtoMinimizeEMI
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2.2.2Analog,Digital,andPLLPartitioning
2.2.3BoardStackup
Signal1
PowerPlane
GNDPlane
Signal2
2.2.4CableConnectorSocket
USBPHYLayoutGuide
ConsidertherecommendationslistedbelowtoachieveproperESD/EMIperformance:
•Usea0.01µFcaponeachcablepowerVBUSlinetochassisGNDclosetotheUSBconnectorpin.
•Usea0.01µFcaponeachcablegroundlinetochassisGNDnexttotheUSBconnectorpin.
•Ifvoltageregulatorsareused,placea0.01µFcaponbothinputandoutput.Thisistoincreasethe
immunitytoESDandreduceEMI.Forotherrequirements,seethedevice-specificdatasheet.
Ifseparatepowerplanesareused,theymustbetiedtogetheratonepointthroughalow-impedance
bridgeorpreferablythroughaferritebead.Caremustbetakentocapacitivelydecoupleeachpowerrail
closetothedevice.Theanalogground,digitalground,andPLLgroundmustbetiedtogethertothe
low-impedancecircuitboardgroundplane.
BecauseofthehighfrequenciesassociatedwiththeUSB,aprintedcircuitboardwithatleastfourlayers
isrecommended;twosignallayersseparatedbyagroundandpowerlayerasshowninFigure2.
Figure2.Four-LayerBoardStack-Up
Themajorityofsignaltracesshouldrunonasinglelayer,preferablySIGNAL1.Immediatelynexttothis
layershouldbetheGNDplane,whichissolidwithnocuts.Avoidrunningsignaltracesacrossasplitin
thegroundorpowerplane.Whenrunningacrosssplitplanesisunavoidable,sufficientdecouplingmust
beused.MinimizingthenumberofsignalviasreducesEMIbyreducinginductanceathighfrequencies.
Shortthecableconnectorsocketsdirectlytoasmallchassisgroundplane(GNDstrap)thatexists
immediatelyunderneaththeconnectorsockets.ThisshortsEMI(andESD)directlytothechassisground
beforeitgetsontotheUSBcable.Thisetchplaneshouldbeaslargeaspossible,butalltheconductors
comingoffconnectorpins1through6musthavetheboardsignalGNDplanerununder.Ifneeded,scoop
outthechassisGNDstrapetchtoallowforthesignalgroundtoextendundertheconnectorpins.Note
thattheetchescomingfrompins1and4(VBUSpowerandGND)shouldbewideandvia-edtotheir
respectiveplanesassoonaspossible,respectingthefilteringthatmaybeinplacebetweentheconnector
pinandtheplane.SeeFigure3foraschematicexample.
PlaceaferriteinserieswiththecableshieldpinsneartheUSBconnectorsockettokeepEMIfromgetting
ontothecableshield.Theferritebeadbetweenthecableshieldandgroundmaybevaluedbetween10Ω
and50Ωat100MHz;itshouldberesistivetoapproximately1GHz.TokeepEMIfromgettingontothe
cablebuspowerwire(averylargeantenna)aferritemaybeplacedinserieswithcablebuspower,
VBUS,neartheUSBconnectorpin1.Theferritebeadbetweenconnectorpin1andbuspowermaybe
valuedbetween47Ωandapproximately1000Ωat100MHz.Itshouldcontinuebeingresistiveoutto
approximately1GHz,asshowninFigure3.
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U2
FerriteBead
VBUS
U1
USBSocket
5
4
3
2
1
6
SHIELD_GND
GND
DP
DM
+5V
SHIELD_GND
FerriteBead
2.2.5ClockRoutings
Trace
3W 3W
W
USBPHYLayoutGuide
Figure3.USBConnector
Toaddressthesystemclockemissionsbetweendevices,placea~10to130Ωresistorinserieswiththe
clocksignal.Useatrialanderrormethodoflookingattheshapeoftheclockwaveformonahigh-speed
oscilloscopeandoftuningthevalueoftheresistancetominimizewaveformdistortion.Thevalueonthis
resistorshouldbeassmallaspossibletogetthedesiredeffect.Placetheresistorclosetothedevice
generatingtheclocksignal.Ifanexternalcrystalisused,followtheguidelinesdetailedintheSelection
andSpecificationofCrystalsforTexasInstrumentsUSB2.0Devices(SLLA122).
Whenroutingtheclocktracesfromonedevicetoanother,trytousethe3Wspacingrule.Thedistance
fromthecenteroftheclocktracetothecenterofanyadjacentsignaltraceshouldbeatleastthreetimes
thewidthoftheclocktrace.Manyclocks,includingslowfrequencyclocks,canhavefastriseandfall
times.Usingthe3Wrulecutsdownoncrosstalkbetweentraces.Ingeneral,leavespacebetweeneachof
thetracesrunningparallelbetweenthedevices.Avoidusingrightangleswhenroutingtracestominimize
theroutingdistanceandimpedancediscontinuities.Forfurtherprotectionfromcrosstalk,runguardtraces
besidetheclocksignals(GNDpintoGNDpin),ifpossible.Thislessensclocksignalcoupling,asshownin
Figure4.
Figure4.3WSpacingRule
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2.2.6Crystals/Oscillator
PowerPins
USBPHY
0.1µF
0.001µF
X1
X0
XTAL
2.2.7DP/DMTrace
USBPHYLayoutGuide
KeepthecrystalanditsloadcapacitorsclosetotheUSBPHYpins,XIandXO(seeFigure5).Notethat
frequenciesfrompowersourcesorlargecapacitorscancausemodulationswithintheclockandshould
notbeplacednearthecrystal.Intheseinstances,errorssuchasdroppedpacketsoccur.Aplaceholder
foraresistor,inparallelwiththecrystal,canbeincorporatedinthedesigntoassistoscillatorstartup.
Powerisproportionaltothecurrentsquared.ThecurrentisI=C*dv/dt,sincedv/dtisafunctionofthe
PHY,currentisproportionaltothecapacitiveload.Cuttingtheloadtodecreasesthecurrentbyandthe
powerto1/4theoriginalvalue.Formoredetailsoncrystalselection,seetheSelectionandSpecification
ofCrystalsforTexasInstrumentsUSB2.0Devices(SLLA122).
Figure5.PowerSupplyandClockConnectiontotheUSBPHY
PlacetheUSBPHYascloseaspossibletotheUSB2.0connector.Thesignalswingduringhigh-speed
operationontheDP/DMlinesisrelativelysmall(400mV±10%),soanydifferentialnoisepickedupon
thetwistedpaircanaffectthereceivedsignal.WhentheDP/DMtracesdonothaveanyshielding,the
tracestendtobehavelikeanantennaandpicksupnoisegeneratedbythesurroundingcomponentsin
theenvironment.Tominimizetheeffectofthisbehavior:
•DP/DMtracesshouldalwaysbematchedlengthsandmustbenomorethan4inchesinlength;
otherwise,theeyeopeningmaybedegraded(seeFigure6).
•RouteDP/DMtracesclosetogetherfornoiserejectionondifferentialsignals,paralleltoeachotherand
withintwomilsinlengthofeachother(startthemeasurementatthechippackageboundary,nottothe
ballsorpins).
•Ahigh-speedUSBconnectionismadethroughashielded,twistedpaircablewithadifferential
characteristicimpedanceof90Ω±15%.Inlayout,theimpedanceofDPandDMshouldeachbe45Ω
±10%.
•DP/DMtracesshouldnothaveanyextracomponentstomaintainsignalintegrity.Forexample,traces
cannotberoutedtotwoUSBconnectors.
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Minimize
ThisDistance
USBPHY
Connector
D+
D-
VBUS
GND
D-
D+
Cable
Connector
2.2.8DP/DMVias
2.2.9ImagePlanes
USBPHYLayoutGuide
Figure6.USBPHYConnectorandCableConnector
Whenaviamustbeused,increasetheclearancesizearoundittominimizeitscapacitance.Eachvia
introducesdiscontinuitiesinthesignal’stransmissionlineandincreasesthechanceofpickingup
interferencefromtheotherlayersoftheboard.Becarefulwhendesigningtestpointsontwistedpairlines;
through-holepinsarenotrecommended.
Animageplaneisalayerofcopper(voltageplaneorgroundplane),physicallyadjacenttoasignalrouting
plane.Useofimageplanesprovidesalowimpedance,shortestpossiblereturnpathforRFcurrents.Fora
USBboard,thebestimageplaneisthegroundplanebecauseitcanbeusedforbothanaloganddigital
circuits.
•Donotroutetracessotheycrossfromoneplanetotheother.ThiscancauseabrokenRFreturnpath
resultinginanEMIradiatingloopasshowninFigure7.Thisisimportantforhigherfrequencyor
repetitivesignals.Therefore,onamulti-layerboard,itisbesttorunallclocksignalsonthesignal
planeaboveasolidgroundplane.
•Avoidcrossingtheimagepowerorgroundplaneboundarieswithhigh-speedclocksignaltraces
immediatelyaboveorbelowtheseparatedplanes.Thisalsoholdstrueforthetwistedpairsignals(DP,
DM).AnyunusedareaofthetopandbottomsignallayersofthePCBcanbefilledwithcopperthatis
connectedtothegroundplanethroughvias.
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Don't
Do
AnalogPowerPlane
UnwantedCapacitance
DigitalPowerPlane
USBPHYLayoutGuide
Figure7.DoNotCrossPlaneBoundaries
•Donotoverlapplanesthatdonotreferenceeachother.Forexample,donotoverlapadigitalpower
planewithananalogpowerplaneasthisproducesacapacitancebetweentheoverlappingareasthat
couldpassRFemissionsfromoneplanetotheother,asshowninFigure8.
Figure8.DoNotOverlapPlanes
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SlotinImagePlane
RFReturn
Current
Bad
SlotinImagePlane
RFReturn
Current
Better
2.2.10JTAGInterface
2.2.11PowerRegulators
3ElectrostaticDischarge(ESD)
3.1IECESDStressingTest
ElectrostaticDischarge(ESD)
•Avoidimageplaneviolations.TracesthatrouteoveraslotinanimageplaneresultsinapossibleRF
returnloop,asshowninFigure9.
Figure9.DoNotViolateImagePlanes
FortestanddebugoftheUSBPHYonly,anIEEEStandard1149.1-1990,IEEEStandardTestAccess
PortandBoundary-ScanArchitecture(JTAG)andSerialTestandConfigurationInterface(STCI)maybe
availableontheSystem-on-Chip(SoC).Ifavailable,keeptheUSBPHYJTAGinterfacelessthansix
inches;keepingthisdistanceshortreducesnoisecouplingfromotherdevicesandsignallossdueto
resistance.
Switchingpowerregulatorsareasourceofnoiseandcancausenoisecouplingifplacedclosetosensitive
areasonacircuitboard.Therefore,theswitchingpowerregulatorshouldbekeptawayfromtheDP/DM
signals,theexternalclockcrystal(orclockoscillator),andtheUSBPHY.
InternationalElectronicCommission(IEC)61000-4-xxisasetofabout25testingspecificationsfromthe
IEC.IECESDStressingisdonebothun-poweredandwithpowerapplied,andwiththedevicefunctioning.
Theremustbenophysicaldamage,andthedevicemustkeepworkingnormallyaftertheconclusionof
thestressing.Typically,equipmenthastopassIECstressingat8kVcontactand15kVairdischarge,or
higher.Tomarketproducts/systemsintheEuropeancommunity,allproducts/systemsmustbeCE
compliantandhavetheCEMark.ToobtaintheCEMark,allproducts/systemsneedtogothroughand
passIECstandardrequirements;forESD,itis61000-4-2.61000-4-2requiresthattheproducts/systems
passcontactdischargeat8kVandairdischargeat15kV.WhenperforminganIECESDStressing,only
pinsaccessibletotheoutsideworldneedtopassthetest.Thesystemintowhichtheintegratedcircuit(IC)
isplacedmakesadifferenceinhowwelltheICdoes.Forexample:
•CablebetweenthezappointandtheICattenuatethehighfrequenciesinthewaveform.
•SeriesinductanceonthePCBboardattenuatesthehighfrequencies.
•Unlessthecapacitor’sgroundconnectionisinductive,capacitancetogroundshuntsawayhigh
frequencies.
ThefollowingsectionsdescribeindetailtheIECESDStressingTestmodesandtesttypes.
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3.1.1TestMode
3.1.2AirDischargeMode
3.1.3TestType
3.2TIComponentLevelIECESDTest
3.3ConstructionofaCustomUSBConnector
ElectrostaticDischarge(ESD)
TheIECESDStressingtestisdonethroughtwomodes:contactdischargemodeandairdischargemode.
Forthecontactdischargetestmode,thepreferredwayisdirectcontactappliedtotheconductivesurfaces
oftheequipmentundertest(EUT).InthecaseoftheUSBsystem,theconductivesurfaceistheouter
casingoftheUSBconnector.TheelectrodeoftheESDgeneratorisheldincontactwiththeEUTora
couplingplanepriortodischarge.Thearcformationiscreatedundercontrolledconditions,insidearelay,
resultinginrepeatablewaveforms;however,thisarcdoesnotaccuratelyrecreatethecharacteristicunique
tothearcofanactualESDevent.
Theairdischargeusuallyappliestoanon-conductivesurfaceoftheEUT.Insteadofadirectcontactwith
theEUT,thechargedelectrodeoftheESDgeneratorisbroughtclosetotheEUT,andasparkintheairto
theEUTactuatesthedischarge.Comparedtothecontactdischargemode,theairdischargeismore
realistictotheactualESDoccurrence.However,duetothevariationsofthearclength,itmaynotbeable
toproducerepeatablewaveform.
TheIECESDStressingtesthastwotesttypes:directdischargeandindirectdischarge.Directdischarge
isappliesdirectlytothesurfaceorthestructureoftheEUT.Itincludesbothcontactdischargeandair
dischargemodes.IndirectdischargeappliestoacouplingplaneinthevicinityoftheEUT.Theindirect
dischargeisusedtosimulatepersonaldischargetoobjectswhichareadjacenttotheEUT.Itincludes
contactdischargemodeonly.
TIComponentLevelIECESDTesttestsonlytheICterminalsthatareexposedinsystemlevel
applications.Itcanbeusedtodeterminetherobustnessofon-chipprotectionandthelatch-upimmunity.
TheICcanonlypasstheTIComponentLevelIECESDtestwhenthereisnolatch-upandICisfully
functionalafterthetest.
AstandardUSBconnector,eithertypeAortypeB,providesgoodESDprotection.However,ifacustom
USBconnectorisdesired,thefollowingguidelinesshouldbeobservedtoensuregoodESDprotection.
•Thereshouldbeaneasilyaccessibleshieldplatenexttotheconnectorforair-dischargemode
purpose.
•TietheoutershieldoftheconnectortoGND.Whenacableisinsertedintotheconnector,theshieldof
thecableshouldfirstmakecontactwiththeoutershield.
•IftheconnectorincludespowerandGND,theleadofpowerandGNDneedtobelongerthanthe
leadsofsignal.
•Theconnectorneedstohaveakeytoensureproperinsertionofthecable.
•SeethestandardUSBconnectorforreference.
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3.4ESDProtectionSystemDesignConsideration
4References
References
ESDprotectionsystemdesignconsiderationiscoveredinSection2ofthisdocument.Thefollowingare
additionalconsiderationsforESDprotectioninasystem.
•MetallicshieldingforbothESDandEMI
•ChassisGNDisolationfromtheboardGND
•AirgapdesignedonboardtoabsorbESDenergy
•ClampingdiodestoabsorbESDenergy
•CapacitorstodivertESDenergy
•TheuseofexternalESDcomponentsontheDP/DMlinesmayaffectsignalqualityandarenot
recommended.
•USB2.0Specification,Intel,2000, />•HighSpeedUSBPlatformDesignGuidelines,Intel,2000,
/>•SelectionandSpecificationofCrystalsforTexasInstrumentsUSB2.0Devices(SLLA122)
10USB2.0BoardDesignandLayoutGuidelinesSPRAAR7–December2007
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