Linh kiện q62702 c2383

BCR 555
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in resistor (R1 = 2.2kΩ, R2 = 10kΩ)

Type

Marking Ordering Code

Pin Configuration

BCR 555

XDs

1=B

Q62702-C2383

Package

2=E

3=C

SOT-23

Maximum Ratings
Parameter

Symbol

Values

Unit

Collector-emitter voltage

VCEO

50

Collector-base voltage

VCBO

50

Emitter-base voltage

VEBO

5

Input on Voltage

Vi(on)

12

DC collector current

IC

500

mA

Total power dissipation, TS = 79 °C

Ptot

330

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

V

- 65 ... + 150

Thermal Resistance
Junction ambient

1)

Junction - soldering point

RthJA

≤ 325

RthJS

≤ 215

K/W

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu

Semiconductor Group

1

Nov-27-1996


BCR 555

Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter

Symbol

Values
min.

typ.

Unit
max.

DC Characteristics
Collector-emitter breakdown voltage

V(BR)CEO

IC = 100 µA, IB = 0
Collector-base breakdown voltage

nA

-

100
mA

-

0.65

hFE

70

-

-

VCEsat

V
-

-

0.3

0.4

-

1

0.5

-

1.4

Vi(off)

IC = 100 µA, VCE = 5 V
Input on Voltage

-

-

IC = 50 mA, IB = 2.5 mA
Input off voltage

50

IEBO

IC = 50 mA, VCE = 5 V
Collector-emitter saturation voltage 1)

-

-

VEB = 5 V, IC = 0
DC current gain

-

ICBO

VCB = 40 V, IE = 0
Emitter cutoff current

50

V(BR)CBO

IC = 10 µA, IB = 0
Collector cutoff current

V

Vi(on)

IC = 10 mA, VCE = 0.3 V
Input resistor

R1

1.5

2.2

2.9

kΩ

Resistor ratio

R1/R2

0.19

0.22

0.24

-

AC Characteristics
Transition frequency

fT

IC = 50 mA, VCE = 5 V, f = 100 MHz

MHz
-

150

-

1) Pulse test: t < 300µs; D < 2%

Semiconductor Group

2

Nov-27-1996


BCR 555

DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)

Collector-Emitter Saturation Voltage
VCEsat = f(IC), hFE = 20

10 3

10 3

mA

hFE

IC

10 2

10 2

10 1

10 1
10 0

10 -1
-1
10

10

0

10

1

10

2

10 0
0.0

mA

0.2

0.4

0.6

V

IC

Input on Voltage Vi(on) = f(IC)
VCE = 0.3V (common emitter configuration)

1.0
V CEsat

Input off voltage Vi(off) = f(IC)
VCE = 5V (common emitter configuration)

10 3

10 1

mA
mA

IC

10 2

IC
10 0

10 1

10 0
10 -1

10 -1

10 -2
-1
10

10

0

10

1

10 -2
0.0

V

V i(on)

Semiconductor Group

0.5

1.0

V

2.0

V i(off)

3

Nov-27-1996


BCR 555

Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy

400

mW

Ptot

TS

300

TA
250

200

150

100

50
0
0

20

40

60

80

100

120 °C 150
TA ,TS

Permissible Pulse Load RthJS = f(tp)

Permissible Pulse Load Ptotmax / PtotDC = f(tp)

10 3

10 4

K/W

RthJS

-

Ptotmax/PtotDC
10 3

10 2

10 1

10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0

10 0

10 -1
-6
10

D=0
0.005
0.01
0.02
0.05

0.1
0.2
0.5

10

-5

Semiconductor Group

10

-4

10

-3

10

10 1

-2

-1

10
s 10
tp

0

4

10 0
-6
10

10

-5

10

-4

10

-3

10

-2

-1

10
s 10
tp

0

Nov-27-1996


This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.