Datasheet a1045

UTC 2SA1015

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
BVCEO=-50V
*Collector current up to 150mA
*High hFE linearity
*Complement to 2SC1815

1

TO-92

1:EMITTER 2:COLLECTOR 3: BASE

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER

SYMBOL

RATING

UNIT

VCBO
VCEO
VEBO

Pc
Ic
IB
Tj
TSTG

-50
-50
-5
400
-150
-50
125
-65 ~ +150

V
V
V
mW
mA
mA
°C
°C

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current
Base current

Junction Temperature
Storage Temperature

ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain(note)

BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob

NF

Ic=-100µA,IE=0
Ic=-10mA,IB=0
IE=-10µA,Ic=0
VCB=-50V,IE=0
VEB=-5V,Ic=0
VCE=-6V,Ic=-2mA
VCE=-6V,Ic=-150mA
Ic=-100mA,IB=-10mA
Ic=-100mA,IB=-10mA
VCE=-10V,Ic=-1mA
VCB=-10V,IE=0,f=1MHz
Ic=-0.1mA,VCE=-6V
RG=1kΩ,f=100Hz

-50
-50
-5

Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
Noise Figure

UTC

TYP

MAX

-100
-100
400

70
25
-0.1

-0.3
-1.1

4.0
0.5

7.0
6

80

UNISONIC TECHNOLOGIES CO. LTD

UNIT
V
V
V
nA
nA

V
V
MHz
pF
dB

1
QW-R201-004,A


UTC 2SA1015

PNP EPITAXIAL SILICON TRANSISTOR

CLASSIFICATION OF hFE1
RANK
RANGE

Y
120-240

G
200-400

TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics

Fig.2 DC current Gain

IB=-300 µA

-30

IB=-250 µA
IB=-200 µA

-20

IB=-150 µA
-10

IB=-100 µA
IB=-50 µA
-8

-12

-16

0
10

-20

-1
-10

0
-10

1

-10

2
-10

0
-10

-1
-10

3
-10

0

-0.2

-0.4

-0.6

-0.8

-1.0

Ic,Collector current (mA)

Base-Emitter voltage (V)

Fig.4 Saturation voltage

Fig.5 Current gain-bandwidth
product

Fig.6 Collector output
Capacitance

3
10

2
10

Ic=10*IB

VBE(sat)

-1
-10

VCE(sat)

-1
-10

1
10

VCE=-6V

1
-10

Collector-Emitter voltage ( V)

0
-10

-2
-10

VCE=-6V
2
10

0
-10

1
-10

2
-10

Ic,Collector current (mA)

UTC

3
-10

Cob,Capacitance (pF)

1
-10

-4

Current Gain-bandwidth
product,fT(MHz)

-0

2
-10

Ic,Collector current (mA)

-40

0

Saturation voltage (V)

Fig.3 Base-Emitter on Voltage

3
10

HFE, DC current Gain

Ic,Collector current (mA)

-50

VCE=-6V
2
10

1
10

0
10

-1
-10

f=1MHz
IE=0

1
10

0
10

-1
10
-1

-10

0
-10

1
-10

Ic,Collector current (mA)

2
-10

0
-10

1
-10

2
-10

3
-10

Collector-Base voltage (V)

UNISONIC TECHNOLOGIES CO. LTD

2

QW-R201-004,A