Datasheet linh kiện a1015
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A1015
PNP General Purpose Transistors
TO-92
P b Lead(Pb)-Free
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
MAXIMUM RATINGS* (TA=25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
-50
V
Collector-Base Voltage
VCBO
-50
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current Continuous
IC
-150
mA
Total Device Dissipation TA=25°C
PD
0.4
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 to + 150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage, IC = -100µA, IE = 0
V(BR)CBO
-
-50
V
Collector-Emitter Breakdown Voltage, IC = -0.1mA, IB = 0
V(BR)CEO
-
-50
V
Emitter-Base Breakdown Voltage, IE = -100µA, IC = 0
V(BR)EBO
-
-5.0
V
Collector Cut-off Current, VCB = -50V, IE = 0
ICBO
-
-0.1
µA
Collector Cut-off Current, VCE = -50V, IB = 0
ICEO
-
-0.1
µA
Emitter Cut-off Current, VEB = -5.0V, IC = 0
IEBO
-
-0.1
µA
OFF CHARACTERISTICS
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A1015
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Typ
Max
Unit
Symbol
Min
hFE1
70
-
400
-
Collector-Emitter Saturation Voltage
IC=-100mA, IB =-10mA
VCE(sat)
-
-
-0.3
V
Base-Emitter Voltage
IC=-100mA, IB =-10mA
VBE(sat)
-
-
-1.1
V
fT
80
-
-
MHz
Cob
-
19
-
pF
NF
-
-
6
dB
Characteristics
ON CHARACTERISTICS
DC Current Gain
VCE =-6.0V, I C =-2.0mA
TransitionFrequence
VCE = -10V, IC = -1mA, f = 30MHz
Collector Output Capacitance
VCB = -10V, IE = 0, f = 1MHz
Noise Figure
VCE = -6V, I C = -0.1mA, Rg = 10kΩ, f = 1KMHz
CLASSIFICATION OF hFE1
Rank
O
Y
GR
Range
70-140
120-240
200-400
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A1015
Typical Characteristics
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A1015
TO-92 Outline Dimensions
unit:mm
E
H
Dim
A
B
C
D
E
G
H
J
K
L
L
C
J
K
Min
Max
3.70
3.30
1.40
1.10
0.55
0.38
0.51
0.36
4.70
4.40
3.43
4.70
4.30
1.270TYP
2.44
2.64
14.10
14.50
D
A
B
G
TO-92
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