Iec 60747 12 3 1998

INTERNATIONAL
STANDARD

IEC
60747-12-3
QC 720103
First edition
1998-02

Part 12-3:
Optoelectronic devices –
Blank detail specification for light-emitting diodes –
Display application

Dispositifs à semiconducteurs –
Partie 12-3: Dispositifs optoélectroniques –
Spécification particulière cadre pour les diodes LED
destinées à des applications d'affichage

Reference number
IEC 60747-12-3:1998 (E)

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Semiconductor devices –


Numbering

Depuis le 1er janvier 1997, les publications de la CEI

sont numérotées à partir de 60000.

As from 1 January 1997 all IEC publications are
issued with a designation in the 60000 series.

Publications consolidées

Consolidated publications

Les versions consolidées de certaines publications de
la CEI incorporant les amendements sont disponibles.
Par exemple, les numéros d’édition 1.0, 1.1 et 1.2
indiquent respectivement la publication de base, la
publication de base incorporant l’amendement 1, et la
publication de base incorporant les amendements 1
et 2.

Consolidated versions of some IEC publications
including amendments are available. For example,
edition numbers 1.0, 1.1 and 1.2 refer, respectively, to
the
base
publication,
the
base
publication
incorporating amendment 1 and the base publication
incorporating amendments 1 and 2.

Validité de la présente publication

Validity of this publication

Le contenu technique des publications de la CEI est
constamment revu par la CEI afin qu'il reflète l'état
actuel de la technique.

The technical content of IEC publications is kept under
constant review by the IEC, thus ensuring that the
content reflects current technology.

Des
renseignements
relatifs
à
la
date
de
reconfirmation de la publication sont disponibles dans
le Catalogue de la CEI.

Information relating to the date of the reconfirmation of
the publication is available in the IEC catalogue.

Les renseignements relatifs à ces révisions, à l'établissement des éditions révisées et aux amendements
peuvent être obtenus auprès des Comités nationaux de
la CEI et dans les documents ci-dessous:

Information on the revision work, the issue of revised
editions and amendments may be obtained from

IEC National Committees and from the following
IEC sources:

•

Bulletin de la CEI

•

IEC Bulletin

•

Annuaire de la CEI
Accès en ligne*

•

IEC Yearbook
On-line access*

•

Catalogue des publications de la CEI
Publié annuellement et mis à jour régulièrement
(Accès en ligne)*

•

Catalogue of IEC publications

Published yearly with regular updates
(On-line access)*

Terminologie, symboles graphiques
et littéraux

Terminology, graphical and letter
symbols

En ce qui concerne la terminologie générale, le lecteur
se reportera à la CEI 60050: Vocabulaire Electrotechnique International (VEI).

For general terminology, readers are referred to
IEC 60050: International Electrotechnical Vocabulary
(IEV).

Pour les symboles graphiques, les symboles littéraux
et les signes d'usage général approuvés par la CEI, le
lecteur consultera la CEI 60027: Symboles littéraux à
utiliser en électrotechnique, la CEI 60417: S ymboles
graphiques utilisables sur le matériel. Index, relevé et
compilation des feuilles individuelles, et la CEI 60617:
Symboles graphiques pour schémas.

For graphical symbols, and letter symbols and signs
approved by the IEC for general use, readers are
referred to publications IEC 60027: Letter symbols to
be used in electrical technology , IEC 60417: Graphical
symbols for use on equipment. Index, survey and
compilation of the single sheets and IEC 60617:

Graphical symbols for diagrams.

Publications de la CEI établies par
le même comité d'études

IEC publications prepared by the same
technical committee

L'attention du lecteur est attirée sur les listes figurant
à la fin de cette publication, qui énumèrent les
publications de la CEI préparées par le comité
d'études qui a établi la présente publication.

The attention of readers is drawn to the end pages of
this publication which list the IEC publications issued
by the technical committee which has prepared the
present publication.

*

*

Voir adresse «site web» sur la page de titre.

See web site address on title page.

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Numéros des publications

INTERNATIONAL
STANDARD

IEC
60747-12-3
QC 720103
First edition
1998-02

Part 12-3:
Optoelectronic devices –
Blank detail specification for light-emitting diodes –
Display application

Dispositifs à semiconducteurs –
Partie 12-3: Dispositifs optoélectroniques –
Spécification particulière cadre pour les diodes LED
destinées à des applications d'affichage

 IEC 1998 Droits de reproduction réservés  Copyright - all rights reserved
Aucune partie de cette publication ne peut être reproduite ni
utilisée sous quelque forme que ce soit et par aucun
procédé, électronique ou mécanique, y compris la photocopie et les microfilms, sans l'accord écrit de l'éditeur.

No part of this publication may be reproduced or utilized in
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including photocopying and microfilm, without permission in
writing from the publisher.

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Telefax: +41 22 919 0300
e-mail:
IEC web site http: //www.iec.ch

Commission Electrotechnique Internationale
International Electrotechnical Commission

CODE PRIX
PRICE CODE

M

Pour prix, voir catalogue en vigueur
For price, see current catalogue

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Semiconductor devices –


–2–

60747-12-3 © IEC:1998 (E)

INTERNATIONAL ELECTROTECHNICAL COMMISSION
_________

SEMICONDUCTOR DEVICES –
Part 12-3: Optoelectronic devices –
Blank detail specification for light-emitting diodes –
Display application

1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, the IEC publishes International Standards. Their preparation is
entrusted to technical committees; any IEC National Committee interested in the subject dealt with may
participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. The IEC collaborates closely with the International Organization
for Standardization (ISO) in accordance with conditions determined by agreement between the two
organizations.
2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, an
international consensus of opinion on the relevant subjects since each technical committee has representation
from all interested National Committees.
3) The documents produced have the form of recommendations for international use and are published in the form
of standards, technical reports or guides and they are accepted by the National Committees in that sense.
4) In order to promote international unification, IEC National Committees undertake to apply IEC International
Standards transparently to the maximum extent possible in their national and regional standards. Any
divergence between the IEC Standard and the corresponding national or regional standard shall be clearly
indicated in the latter.
5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with one of its standards.
6) Attention is drawn to the possibility that some of the elements of this International Standard may be the subject
of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.

International Standard IEC 60747-12-3 has been prepared by subcommittee 47C: Optoelectronic display and imaging devices, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:

FDIS

Report on voting

47C/190/FDIS

47C/198/RVD

Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
The QC number that appears on the front cover of this publication is the specification number
in the IEC Quality Assessment System for Electronic Components (IECQ).
Annex A forms an integral part of this standard.
A bilingual version of this standard may be issued at a later date.

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FOREWORD


60747-12-3 © IEC:1998 (E)

–3–

SEMICONDUCTOR DEVICES –
Part 12-3: Optoelectronic devices –
Blank detail specification for light-emitting diodes –
Display application
INTRODUCTION

This blank detail specification is one of a series of blank detail specifications for semiconductor
devices and should be used with the following IEC publications:
IEC 60747-10/QC 700000:1991, Semiconductor devices – Part 10: Generic specification for
discrete devices and integrated circuits
IEC 60747-12/QC 720100:1991, Semiconductor devices – Part 12: Sectional specification for
optoelectronic devices

Required information
Numbers shown in brackets on this and the following page correspond to the following items of
required information, which should be entered in the spaces provided.

Identification of the detail specification
[1] The name of the national standards organization under whose authority the detail
specification is issued.
[2] The IECQ number of the detail specification.
[3] The numbers and issue numbers of the generic and sectional specifications.
[4] The national number of the detail specification, data of issue and any further information, if
required by the national system.

Identification of the component
[5] Main function and type number.
[6] Information on typical construction (materials, the main technology) and the package. If a
device has several kinds of derivative products, those differences shall be indicated, for
example feature of characteristics in the comparison table.
If a device is sensitive to electrostatic charges, a caution statement shall be added in the
detail specification.
[7] Outline drawing, terminal identification, marking and/or reference to the relevant document
for outlines.
[8] Category of assessed quality according to 2.6 of the generic specification.

[9] Reference data.
_____________________________________________________________________________
[The clauses given in square brackets on the next pages of this standard, which form the front
page of the detail specification, are intended for guidance to the specification writer and shall
not be included in the detail specification.]
[When confusion may arise as to whether a paragraph is only an instruction to the writer or not,
the paragraph shall be indicated between square brackets.]

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The IEC quality assessment system for electronic components is operated in accordance with
the statutes of the IEC and under the authority of the IEC. The object of this system is to define
quality assessment procedures in such a manner that electronic components released by one
participating country as conforming with the requirements of an applicable specification are
equally acceptable in all other participating countries without the need for further testing.


–4–

60747-12-3 © IEC:1998 (E)

[Name (address) of responsible NAI
(and possibly of body from which
specification is available).]

[1]

[Number of IECQ detail specification,
plus issue number and/or date.]

[2]

ELECTRONIC COMPONENT OF
ASSESSED QUALITY IN ACCORDANCE
WITH:
Generic specification:
IEC 60747-10/QC700000
Sectional specification:
IEC 60747-12/QC720100
[and national references if different.]

[3]

[National number of detail specification.

[4]

This box need not be used if
national number repeats IECQ number.]

[5]

[Type number(s) of the relevant device(s)]
Ordering information: see clause 7 of this standard.
1 Mechanical description

[7]

Outline references:

IEC 60191-2....... [mandatory if available]
and/or national [if there is no IEC outline].
Outline drawing:
[May be transferred to, or given with more
details in clause 10 of this standard.]

2 Short description

[6]

Light emitting diode/IR emitting diode:
with/without pigtail
Type: surface/edge emitting semiconductor
material;
GaAs/GaAlAs/InP/InGaAsP/.......
Encapsulation: metal/glass/plastic/.........

Terminal identification:
[Drawing showing pin assignments,
including graphical symbols.]

[Some important reference data may be added.]

Marking: [letters and figures]
[The detail specification shall prescribe the
information to be marked on the device, if any.]
[See 2.5 of generic specification and/or
clause 6 of this standard.]

3 Categories of assessed quality

[8]

[From 2.6 of the generic specification.]

Reference data

[9]

Information about manufacturers who have components qualified to this detail specification is
available in the current qualified products list.

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DETAIL SPECIFICATION FOR: LIGHT EMITTING DIODES – DISPLAY APPLICATION


60747-12-3 © IEC:1998 (E)

4

–5–

Limiting values (absolute maximum rating system)

These values apply over the operating temperature range, unless otherwise stated.
[Repeat only subclause numbers used, with title. Any additional values should be given at the
appropriate place, but without clause number(s).]
[Curves should preferably be given in clause 10 of this standard.]

Subclause

Symbol

Requirements
Min.

Max.

Unit

4.1

Storage temperature

T stg

x

x

°C

4.2

Operating ambient temperature

T amb

x

x

°C

4.3

Soldering temperature (at maximum
soldering time and minimum distance
to case specified)

T sld

x
x

°C
s
mm

4.4

Reverse voltage

VR

x

V

4.5

Continuous forward current at ambient
temperature of 25 °C

IF

x

mA

4.6

Peak forward current at ambient
temperature of 25 °C, under specified
pulse conditions (where appropriate)

I FM

x

A

4.7

Power dissipation

P tot

x

W

x

Electrical and optical characteristics

See clause 8 of this standard for inspection requirements.
[Repeat only subclause numbers used, with title. Any additional characteristics shall be given
at the appropriate place, but without subclause number(s).]
[When several devices are defined in the same detail specification, the relevant values should
be given on successive lines, avoiding identical values.]
[Curves should preferably be given in clause 10 of this standard.]

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5

Limiting value


–6–

Subclause

Characteristics

Symbol

Conditions at T amb or
T case = 25 °C unless
otherwise specified

60747-12-3 © IEC:1998 (E)

Requirements

Min.

Tested

Max.

5.1

Forward voltage

VF

I F as specified

x

V

A2b

5.2

Reverse current

IR

V R as specified

x

àA

A2b

5.3

Luminous intensity

IV

I F as specified
variant as specified

x

mcd

A2b

5.4

Half-intensity angle

(where appropriate)

ẵ

I F as specified

x

x

deg

C2a

5.5

Peak emission
wavelength

λp

I F as specified

x

x

nm

A4

5.6

Spectral radiation
bandwidth

∆λ

I F as specified

x

nm

C2a

Marking

[Any particular information other than given in box [7] (clause 1) and/or subclause 2.5 of
IEC 60747-10, shall be given here.]
7

Ordering information

The following minimum information is necessary to order a specific device, unless otherwise
specified:
– precise type reference (and nominal voltage value, if required);
– IECQ reference of detail specification with issue number and/or date when relevant;
– category of assessed quality as defined in 3.7 of the sectional specification and, if required,
screening sequence, as defined in 3.6 of the sectional specification;

– any other particulars.
8

Test conditions and inspection requirements

[These are given in the following tables, where the values and exact test conditions to be used
shall be specified as required for a given type, and as required by the relevant test in the
relevant IEC publication.]
[When several devices are included in the same detail specification, the relevant conditions
and/or values should be given on successive lines, where possible avoiding repetition of
identical conditions and/or values.]
[The choice between alternative tests or test methods shall be made when a detail
specifications is written.]
Throughout the following text, reference to subclause numbers are made with respect to the
generic specification, unless otherwise stated, and test methods are quoted from clause 4 of
the sectional specification.
[For sampling requirements, either refer to, or reference, values of 3.7 of the sectional
specification, according to applicable category(ies) of assessed quality.]
[For group A, the choice between AQL and LTPD system shall be made in the detail specification.]

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6

Unit


60747-12-3 © IEC:1998 (E)

–7–

GROUP A
Lot-by-lot tests
LSL = lower specification limit
USL = upper specification limit





from group A

All tests are non-destructive (3.6.6 of the generic specification)

Inspection or test

Symbol

Reference

Inspection or test
requirement/limits

Min.
Subgroup A1

Max.

4.2.1.1 of the generic

specification

External visual
inspection
Subgroup A2a
Inoperative devices

Inverted polarity

Polarity
Luminous intensity

IV

IEC 60747-5, IV, 1.1

I F as specified

I V < = 0,1 LSL

Forward voltage

VF

IEC 60747-3, IV

Variant as specified

Short circuit:

Reverse current

IR

IEC 60747-3, IV

V R as specified

V F < = 0,1 USL
Open circuit:

V F > = 5 USL
I R > = 50 USL
Subgroup A2b
Optical and electrical
characteristics
- Luminous intensity

IV

IEC 60747-5, IV, 1.1

I F as specified

- Forward voltage

VF

IEC 60747-3, IV

Variant as specified

- Reverse current

IR

IEC 60747-3, IV

I F as specified

LSL

V R as specified

LSL

LSL

Subgroup A4
- Peak emission
wavelength

λp

IEC 60747-5, IV, 1.4

I F as specified

LSL

USL

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Conditions at T amb or
T case = 25 °C, unless
otherwise stated
(see clause 4 of the
generic specification)


–8–

60747-12-3 © IEC:1998 (E)

GROUP B
Lot-by-lot tests
(In the case of category I, see 2.6 of the generic specification)
LSL = lower specification limit from group A
USL = upper specification limit from group A
Only tests marked (D) are destructive (see 3.6.6 of the generic specification)

Symbol

Reference

Inspection or test
requirement/limits

Min.
IEC 60747-10, 4.2.2
and appendix B

Subgroup B1
Dimensions
Subgroup B3

Max.

(see clause 1 of this standard)
(D)
IEC 60749, II, 1.2

As specified

Lead bending

No damage

Subgroup B4
IEC 60749, II, 2.1

As specified

Good wetting

Solderability
Subgroup B5

(D)

Rapid change of
temperature
followed by:
either
- damp heat,
cyclic
(D)
(for non-cavity
devices only)
with final measurements,
- reverse current
- forward voltage
- luminous intensity;

IEC 60749, III, 1

IR
VF
IV

IEC 60749, III, 4

As specified

IEC 60747-3, IV
IEC 60747-3, IV
IEC 60747-5, IV, 1.1

V R as specified
I F as specified
I F as specified
Variant as specified

or
- sealing
(for cavity devices only)

USL
USL
LSL

IEC 60749, III, 5

Subgroup B8
Electrical endurance
with final measurements,
- reverse current
- forward voltage
- luminous intensity

Subgroup CRRL

IR
VF
IV

IEC 60747-3, V

I F as specified as in 4.5,
168 h.

IEC 60747-3, IV
IEC 60747-3, IV
IEC 60747-5, IV, 1.1

V R as specified
I F as specified
I F as specified
Variant as specified

2 USL
1,2 USL
0,5 LSL

Attributes information for B3, B4, and B5.
Measurement information before and after B8.

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Inspection or test

Conditions at T amb or
T case = 25 °C, unless
otherwise stated
(see clause 4 of the
generic specification)

60747-12-3 © IEC:1998 (E)

–9–

GROUP C
Periodic tests
LSL = lower specification limit from group A
USL = upper specification limit from group A
Only tests marked (D) are destructive (see 3.6.6 of the generic specification)

Inspection or test

Symbol

Reference

Inspection or test
requirement/limits

Min.
Subgroup C1

IEC 60747-10,

Dimensions

4.2.2 and appendix B

Max.

(see clause 1 of this standard)

Subgroup C2a
Spectral radiation
bandwidth
Half-intensity angle
(where appropriate)

∆λ

IEC 60747-5, IV, 1.4

I F as specified

θ½

IEC 60747-5, IV, 1.11

I F as specified

IEC 60749, II, 1.1

As specified

IEC 60749, II, 2.2

Method 1A

IEC 60743, IV

IEC 60747-3, IV
IEC 60747-5, IV, 1.1

V R as specified
I F as specified
I F as specified
Variant as specified

IEC 60749, II, 3, 4, 5

As specified

USL

LSL

USL

Subgroup C3
Robustness of
terminations:
- tensile

(D)

No damage

Subgroup C4
Resistance to
soldering heat

(D)

with final
measurements:
- reverse current
- forward voltage
- luminous intensity

IR
VF
IV

USL
USL
LSL

Subgroup C6
(for cavity devices only)
Vibration or shock
followed by acceleration, steady-state
with final
measurements:
as in subgroup C4

(continued)

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Conditions at T amb or
T case = 25 °C, unless
otherwise stated
(see clause 4 of the
generic specification)


– 10 –

60747-12-3 © IEC:1998 (E)

GROUP C
Periodic tests (concluded)

Inspection or test

Symbol

Reference

Conditions at T amb or
T case = 25 °C, unless
otherwise stated
(see clause 4 of the
generic specification)

Inspection or test
requirement/limits

Min.

Max.

Subgroup C7

IEC 60749, III, 5

As specified

IEC 60749, III, 4

As specified

Annex A of this
standard

Operation life:

or
Damp heat, cyclic

(D)

with final
measurements:
as in subgroup B8

Subgroup C8
Electrical endurance

Subgroup C9
Storage at high
temperature
with final
measurements:
as in subgroup B8
Subgroup CRRL

1 000 h min.

I F specified as in 4.5 of
this standard

with final
measurements:
as in subgroup B8
(D)
IEC 60749, III, 2

1 000 h min., at
T = T stg ,max

Attributes information for: C3, C4, and C8.
Measurement information before and after C7, C8 and C9.

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(for non-cavity devices
only)

Damp heat,
steady-state
(D)


60747-12-3 © IEC:1998 (E)

9

– 11 –

Group D – qualification approval tests

[When required, these tests shall be prescribed in the detail specification.]

10

Additional information (not for inspection purposes)

[To be given only as far as necessary for the specification and use of the devices, for instance:
– temperature derating curves referred to in the limiting values;
either

or
– typical curve or coefficient of luminous intensity versus temperature and typical curve of
luminous intensity versus forward current (d.c. or pulse, as specified);
– typical curve or coefficient of change in peak emission wavelength versus temperature;
– typical radiation diagram;
– thermal resistance between junction and case;
– complete definition of a circuit for measurement, or of an additional method;

– detailed outline drawing.]

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– typical curve or coefficient of luminous flux versus temperature and typical curve of
luminous flux versus forward current (d.c. or pulse, as specified),


– 12 –

60747-12-3 © IEC:1998 (E)

Annex A
(normative)
Electrical endurance
A.1

Test circuit
IF
Rs

IEC 144/98

R s = current-limiting resistance
D = the measured diode

A.2

IF

Operating conditions
= as specified in 4.5 of this standard.

T amb = 25 °C.

__________

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D


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1.

7.

13.

No. of IEC standard:

Please rate the standard in the following
areas as (1) bad, (2) below average,
(3) average, (4) above average,
(5) exceptional, (0) not applicable:

If you said yes to 12 then how many
volumes:

.......................................................
2.

clearly written

Tell us why you have the standard.
(check as many as apply). I am:

logically arranged
information given by tables

the buyer

illustrations

the user

technical information

................................................
14.
Which standards organizations
published the standards in your
library (e.g. ISO, DIN, ANSI, BSI,
etc.):

a librarian

8.

................................................

a researcher

I would like to know how I can legally
reproduce this standard for:

15.

an engineer

My organization supports the
standards-making process (check as
many as apply):

a safety expert

internal use

involved in testing

sales information

with a government agency

product demonstration

buying standards

in industry

other................................

using standards

3.
This standard was purchased from?

9.

membership in standards
organization

In what medium of standard does your
organization maintain most of its
standards (check one):

serving on standards
development committee

paper
.......................................................
4.

16.

mag tapes

My organization uses (check one)

CD-ROM

This standard will be used
(check as many as apply):

English text only

on line

Both English/French text

in a standards library

9A.

to develop a new product

If your organization currently maintains
part or all of its standards collection in

electronic media, please indicate the
format(s):

to use in a tender

French text only

floppy disk

for reference

to write specifications

other ................................

microfilm/microfiche

for educational purposes

raster image

for a lawsuit

full text

17.
Other comments:
........................................................
........................................................

for quality assessment

10.

........................................................

for certification

In what medium does your organization
intend to maintain its standards collection
in the future (check all that apply):

........................................................

for general information
for design purposes

paper

for testing

........................................................

microfilm/microfiche

other........................................

mag tape

........................................................

5.

CD-ROM

18.

This standard will be used in conjunction
with (check as many as apply):

floppy disk

Please give us information about you
and your company

IEC
ISO
corporate

on line
10A.

name: ..............................................

For electronic media which format will be
chosen (check one)

other (published by ................... )

raster image

other (published by ................... )

full text

other (published by ................... )

job title:............................................
company: .........................................

11.

address: ...........................................

6.

My organization is in the following sector
(e.g. engineering, manufacturing)

........................................................

This standard meets my needs
(check one)

...............................................

not at all
almost
fairly well
exactly

........................................................

12.
Does your organization have a standards
library:

........................................................

yes

No. employees at your location:.........

no

turnover/sales:..................................

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other........................................


Enquête sur les normes

La CEI se préoccupe de savoir comment ses normes sont accueillies et utilisées.
Les réponses que nous procurera cette enquête nous aideront tout à la fois à améliorer nos
normes et les informations qui les concernent afin de toujours mieux répondre à votre attente.
Nous aimerions que vous nous consacriez une petite minute pour remplir le questionnaire
joint que nous vous invitons à retourner au:

Commission Electrotechnique Internationale
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Case postale 131
1211 Genève 20
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Nous vous remercions de la contribution que vous voudrez bien apporter ainsi
à la Normalisation Internationale

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Ne pas affranchir

A

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Non affrancare
No stamp required

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SUISSE

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Commission Electrotechnique Internationale
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1211 GENÈVE 20
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1.

7.

13.

Numéro de la Norme CEI:

Nous vous demandons maintenant de donner
une note à chacun des critères ci-dessous
(1, mauvais; 2, en-dessous de la moyenne;
3, moyen; 4, au-dessus de la moyenne;
5, exceptionnel; 0, sans objet)

En combien de volumes dans le cas
affirmatif?

.......................................................
2.
Pourquoi possédez-vous cette norme?
(plusieurs réponses possibles). Je suis:

................................................

clarté de la rédaction

14.

logique de la disposition

Quelles organisations de normalisation
ont publié les normes de cette
bibliothèque (ISO, DIN, ANSI, BSI, etc.):

l’acheteur

tableaux informatifs

l’utilisateur

illustrations

bibliothécaire

informations techniques

................................................

chercheur

8.

15.

ingénieur

J’aimerais savoir comment je peux
reproduire légalement cette norme pour:

Ma société apporte sa contribution à
l’élaboration des normes par les
moyens suivants
(plusieurs réponses possibles):

expert en sécurité

usage interne

chargé d’effectuer des essais

des renseignements commerciaux

fonctionnaire d’Etat

9.

en qualité de membre d’organisations de normalisation

Quel support votre société utilise-t-elle
pour garder la plupart de ses normes?

en qualité de membre de
comités de normalisation

papier

.......................................................
4.

16.

bandes magnétiques

Ma société utilise (une seule réponse)

CD-ROM

Comment cette norme sera-t-elle utilisée? (plusieurs réponses possibles)

des normes en anglais seulement

abonnement à un serveur électronique

des normes bilingues anglais/
franỗais

dans une bibliothốque de normes

9A.

pour dộvelopper un produit nouveau

Si votre société conserve en totalité ou en
partie sa collection de normes sous forme
électronique, indiquer le ou les formats:

pour utilisation dans une soumission
à des fins éducatives

format tramé (ou image balayée
ligne par ligne)

pour un procès

texte intégral

pour une évaluation de la qualité

10.

pour la certification

Sur quels supports votre société prévoitelle de conserver sa collection de normes
à l’avenir (plusieurs réponses possibles):

à titre d’information générale

des normes en franỗais seulement

disquettes

comme refộrence

pour rộdiger des spộcifications

autres ..............................

microfilm/microfiche

pour une ộtude de conception

17.
Autres observations
........................................................
........................................................
........................................................
........................................................

papier

pour effectuer des essais

microfilm/microfiche

........................................................

bandes magnétiques

18.

5.

CD-ROM

Cette norme est-elle appelée à être utilisée
conjointement avec d’autres normes?

Lesquelles? (plusieurs réponses possibles):

disquettes

Pourriez-vous nous donner quelques
informations sur vous-mêmes et votre
société?

autres ......................................

CEI
ISO

abonnement à un serveur électronique
10A.
Quel format serait retenu pour un moyen
électronique? (une seule réponse)

internes à votre société

format tramé

autre (publiée par) .................... )
autre (publiée par) .................... )
autre (publiée par) .................... )
6.
Cette norme répond-elle à vos besoins?
pas du tout
à peu près

nom .................................................

texte intégral

fonction ............................................
nom de la société .............................
adresse ............................................

11.

A quel secteur d’activité appartient votre société?
........................................................
(par ex. ingénierie, fabrication)

...............................................

........................................................

12.
Votre société possède-t-elle une
bibliothèque de normes?

assez bien

Oui

parfaitement

Non

........................................................
nombre d’employés...........................
chiffre d’affaires:...............................

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Où avez-vous acheté cette norme?

en utilisant des normes

autres ..............................

autres ......................................
3.

en achetant des normes

des démonstrations de produit

dans l’industrie


IEC publications prepared
by Technical Committee No. 47

60191:—Normalisation mécanique des dispositifs à semi-conducteurs.
60191-1 (1966)
Première partie: Préparation des dessins des
dispositifs à semiconducteurs.

60191-1A (1969)
Premier complément.
60191-1B (1970)
Deuxième complément.
60191-1C (1974)
Troisième complément.
60191-2 (1966)
Partie 2: Dimensions – Réimpression consolidée
comprenant la CEI 191-2A (1967), 191-2B
(1969), 191-2C (1970), 191-2D (1971), 191-2E
(1974), 191-2F (1976), 191-2G (1978), 191-2H
(1978), 191-2J (1980), 191-2K (1981), 191-2L
(1982), 191-2M (1983), 191-2N (1987), 191-2P
(1988), 191-2Q (1990), 191-2R (1995), 191-2S
(1995), 191-2T (1996), 191-2U (1997).
60191-3 (1974)
Troisième partie: Règles générales pour la
préparation des dessins d'encombrement des
circuits intégrés.
Modification n° 1 (1983).
Amendement 2 (1995).
60191-3A (1976)
Premier complément.
60191-3B (1978)
Deuxième complément.
60191-3C (1987)
Troisième complément.
60191-3D (1988)
Quatrième complément.
60191-3E (1990)

Cinquième complément.
60191-3F (1994)
Sixième complément.
60191-4 (1987)
Quatrième partie: Système de codification et
classification en formes des btiers pour
dispositifs à semiconducteurs.
60191-5 (1997)
Partie 5: Recommandations applicables aux
btiers à transfert automatisé sur bande (TAB)
des circuits intégrés.
60191-6 (1990)
Sixième partie: Règles générales pour la
préparation des dessins d'encombrement des
dispositifs à semiconducteurs à montage en
surface.
60747:— Dispositifs à semiconducteurs. Dispositifs discrets.
60747-1 (1983)
Première partie: Généralités.
Amendement 1 (1991).
Amendement 2 (1993).
Amendement 3 (1996).
60747-2 (1983)
Deuxième partie: Diodes de redressement.
Amendement 1 (1992).
Amendement 2 (1993).
60747-2-1 (1989)
Section un: Spécification particulière-cadre pour
les diodes de redressement (y compris les diodes à
avalanche) à température ambiante et de btier

spécifiées, pour courants jusqu'à 100 A.
60747-2-2 (1993)
Section 2: Spécification particulière cadre pour les
diodes de redressement (y compris les diodes à
avalanche), à températures ambiante et de btier
spécifiées, pour courants supérieurs à 100 A.
60747-3 (1985)
Troisième partie: Diodes de signal (y compris les
diodes de commutation) et diodes régulatrices.
Amendement 1 (1991).
Amendement 2 (1993).
60747-3-1 (1986)
Section un: Spécification particulière cadre pour
les diodes de signal, les diodes de commutation et
les diodes à avalanche contrôlée.
60747-3-2 (1986)
Section deux: Spécification particulière cadre pour
les diodes régulatrices de tension et les diodes de
tension de référence, à l'exclusion des diodes de
référence de précision compensées en température.
60747-4 (1991)
Quatrième partie: Diodes et transistors hyperfréquences.
Amendement 1 (1993).

60191:— Mechanical standardization of semiconductor devices.
60191-1 (1966)
Part 1: Preparation of drawings of semiconductor
devices.
60191-1A (1969)
First supplement.

60191-1B (1970)
Second supplement.
60191-1C (1974)
Third supplement.
60191-2 (1966)
Part 2: Dimensions – Consolidated reprint
consisting of IEC 191-2A (1967), 191-2B (1969),
191-2C (1970), 191-2D (1971), 191-2E (1974),
191-2F (1976), 191-2G (1978), 191-2H (1978),
191-2J (1980), 191-2K (1981), 191-2L (1982),
191-2M (1983), 191-2N (1987), 191-2P (1988),
191-2Q (1990), 191-2R (1995), 191-2S (1995),
191-2T (1996), 191-2U (1997).
60191-3 (1974)
Part 3: General rules for the preparation of outline
drawings of integrated circuits.
Amendment No. 1 (1983).
Amendment 2 (1995).

(suite)

60191-3A (1976)
60191-3B (1978)
60191-3C (1987)
60191-3D (1988)
60191-3E (1990)
60191-3F (1994)
60191-4 (1987)

60191-5 (1997)

60191-6 (1990)

First supplement.
Second supplement.
Third supplement.
Fourth supplement.
Fifth supplement.
Sixth supplement.
Part 4: Coding system and classification into
forms of package outlines for semiconductor
devices.
Part 5: Recommendations applying to integrated
circuit packages using tape automated bonding
(TAB).
General rules for the preparation of outline
drawings of surface mounted semiconductor
device packages.

60747:— Semiconductor devices. Discrete devices.
60747-1 (1983)
Part 1: General.
Amendment 1 (1991).
Amendment 2 (1993).
Amendment 3 (1996).
60747-2 (1983)
Part 2: Rectifier diodes.
Amendment 1 (1992).
Amendment 2 (1993).
60747-2-1 (1989)

Section One: Blank detail specification for
rectifier diodes (including avalanche rectifier
diodes), ambient and case-rated up to 100 A.
60747-2-2 (1993)

60747-3 (1985)

60747-3-1 (1986)

60747-3-2 (1986)

60747-4 (1991)

(continued)

Section 2: Blank detail specification for rectifier
diodes (including avalanche rectifier diodes),
ambient and case-rated, for currents greater than
100 A.
Part 3: Signal (including switching) and regulator
diodes.
Amendment 1 (1991).
Amendment 2 (1993).
Section One: Blank detail specification for signal
diodes, switching diodes and controlled-avalanche
diodes.
Section Two: Blank detail specification for
voltage-regulator diodes and voltage-reference
diodes,
excluding

temperature-compensated
precision reference diodes.
Part 4: Microwave diodes and transistors.
Amendment 1 (1993).

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Publications de la CEI préparées
par le Comité d’Etudes n° 47


Publications de la CEI préparées
par le Comité d’Etudes n° 47 (suite)

IEC publications prepared
by Technical Committee No. 47 (continued)

60747-5-1 (1997)

60747-5-1 (1997)

60747-5-2 (1997)
60747-5-3 (1997)
60747-6 (1983)

60747-6-1 (1989)

60747-6-2 (1991)

60747-7 (1988)

60747-7-1 (1989)

60747-7-2 (1989)

60747-7-3 (1991)
60747-7-4 (1991)

60747-8 (1984)

60747-8-1 (1987)

60747-8-2 (1993)

60747-8-3 (1995)

60747-10 (1991)

60747-11 (1985)

60747-12 (1991)
60747-12-1 (1995)

60747-12-2 (1995)

(suite)

60747-5-2 (1997)
60747-5-3 (1997)

60747-6 (1983)

60747-6-1 (1989)

Discrete semiconductor devices and integrated
circuits – Part 5-1: Optoelectronic devices –
General.
Part 5-2: Optoelectronic devices – Essential
ratings and characteristics.
Part 5-3: Optoelectronic devices – Measuring
methods.
Part 6: Thyristors.
Amendment 1 (1991).
Amendment 2 (1994).
Section One: Blank detail specification for
reverse blocking triode thyristors, ambient and
case-rated, up to 100 A.

60747-6-2 (1991)

Section Two: Blank detail specification for bidirectional triode thyristors (triacs), ambient or
case-rated temperature, up to 100 A.

60747-6-3 (1993)

Section Three: Blank detail specification for
reverse blocking triode thyristors, ambient and
case-rated, for currents greater than 100 A.

60747-7 (1988)

Part 7: Bipolar transistors.
Amendment 1 (1991).
Amendment 2 (1994).
Section One: Blank detail specification for
ambient-rated bipolar transistors for low and highfrequency amplification.

60747-7-1 (1989)

60747-7-2 (1989)

60747-7-3 (1991)
60747-7-4 (1991)

60747-8 (1984)

60747-8-1 (1987)

Section Two: Blank detail specification for caserated bipolar transistors for low-frequency
amplification.
Section Three: Blank detail specification for
bipolar transistors for switching applications.
Section Four: Blank detail specification for caserated bipolar transistors for high-frequency
amplification.
Part 8: Field-effect transistors.
Amendment 1 (1991).
Amendment 2 (1993).
Section One: Blank detail specification for singlegate field-effect transistors up to 5 W and 1 GHz.

60747-8-2 (1993)

Section Two: Blank detail specification for fieldeffect transistors for case-rated power amplifier
applications.

60747-8-3 (1995)

Section 3: Blank detail specification for case-rated
field-effect transistors for switching applications.

60747-10 (1991)

Part 10: Generic specification for discrete devices
and integrated circuits.
Amendment 1 (1995).
Amendment 2 (1996).
Amendment 3 (1996).
Part 11: Sectional specification for discrete
devices.
Amendment 1 (1991).
Part 12: Sectional specification for optoelectronic
devices.
Section 1: Blank detail specification for light
emitting/infrared emitting diodes with/without
pigtail for fibre optic systems and sub-systems.

60747-11 (1985)

60747-12 (1991)
60747-12-1 (1995)

60747-12-2 (1995)

(continued)

Section 2: Blank detail specification for laser
diode modules with pigtail for fibre optic systems
and sub-systems.

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60747-6-3 (1993)

Dispositifs discrets à semiconducteurs et circuits
ingégrés – Partie 5-1: Dispositifs
optoélectroniques – Généralités.
Partie 5-2: Dispositifs optoélectroniques – Valeurs
limites et caractéristiques essentielles.
Partir 5.3: Dispositifs optoélectroniques –
Méthodes de mesure.
Sixième partie: Thyristors.
Amendement 1 (1991).
Amendement 2 (1994).
Section un: Spécification particulière cadre pour
les thyristors triodes bloqués en inverse, à
température ambiante et de btier spécifiée, pour
courants jusqu'à 100 A.
Section deux: Spécification particulière cadre pour
les thyristors triodes bidirectionnels (triacs), à
température ambiante ou à température de btier

spécifiée, jusqu'à 100 A.
Section trois: Spécification particulière cadre pour
les thyristors triodes bloqués en inverse, à
température ambiante et de btier spécifiée, pour
courants supérieurs à 100 A.
Septième partie: Transistors bipolaires.
Amendement 1 (1991).
Amendement 2 (1994).
Section un: Spécification particulière cadre pour
les transistors bipolaires à température ambiante
spécifiée pour amplification en basse et haute
fréquences.
Section deux: Spécification particulière cadre pour
les transistors bipolaires à température de btier
spécifiée pour amplification en basse fréquence.
Section trois: Spécification particulière cadre pour
les transistors bipolaires de commutation.
Section quatre: Spécification particulière cadre
pour les transistors bipolaires à température de
btier spécifiée pour amplification en haute
fréquence.
Huitième partie: Transistors à effet de champ.
Amendement 1 (1991).
Amendement 2 (1993).
Section un: Spécification particulière cadre pour
les transistors à effet de champ à grille unique
jusqu'à 5 W et 1 GHz.
Section deux: Spécification particulière cadre pour
les transistors à effet de champ à température de
btier spécifiée pour applications en amplificateurs

de puissance.
Section 3: Spécification particulière cadre pour les
transistors à effet de champ, à température de
btier spécifiée, pour applications en commutation.
Dixième partie: Spécification générique pour les
dispositifs discrets et les circuits intégrés.
Amendement 1 (1995).
Amendement 2 (1996).
Amendement 3 (1996).
Onzième partie: Spécification intermédiaire pour
les dispositifs discrets.
Amendement 1 (1991).
Partie 12: Spécification intermédiaire pour les
dispositifs optoélectroniques.
Section 1: Spécification particulière cadre pour
diodes électroluminescentes, diodes émettrices
avec/sans fibres amorce pour systèmes et soussystèmes à fibres optiques.
Section 2: Spécification particulière cadre pour
module à diode laser avec fibres amorce pour
systèmes et sous-systèmes à fibres optiques.