Tài liệu N-Channel JFET docx

2N3819
Vishay Siliconix
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
www.vishay.com
7-1
N-Channel JFET
PRODUCT SUMMARY
V
GS(off)
(V) V
(BR)GSS
Min (V) g
fs
Min (mS) I
DSS
Min (mA)
v –8 –25 2 2
FEATURES BENEFITS APPLICATIONS
D Excellent High-Frequency Gain:
Gps 11 dB @ 400 MHz
D Very Low Noise: 3 dB @ 400 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: A
V
= 60 @ 100 mA
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability

D High Low-Level Signal Amplification
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
DESCRIPTION
The 2N3819 is a low-cost, all-purpose JFET which offers good
performance at mid-to-high frequencies. It features low noise
and leakage and guarantees high gain at 100 MHz.
Its TO-226AA (TO-92) package is compatible with various
tape-and-reel options for automated assembly (see
Packaging Information). For similar products in TO-206AF
(TO-72) and TO-236 (SOT-23) packages, see the
2N4416/2N4416A/SST4416 data sheet.
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1

/
16
” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Power Dissipation
a
350 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/_C above 25_C
2N3819
Vishay Siliconix
www.vishay.com
7-2
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ
a
Max Unit
Static
Gate-Source Breakdown Voltage V
(BR)GSS
I
G
= –1 mA , V
DS
= 0 V

–25 –35
Gate-Source Cutoff Voltage V
GS(off)
V
DS
= 15 V, I
D
= 2 nA –3

–8
V
Saturation Drain Current
b
I
DSS
V
DS
= 15 V, V
GS
= 0 V 2 10 20 mA
V
GS
= –15 V, V
DS
= 0 V –0.002 –2 nA
Gate Reverse Current I
GSS
T
A
= 100_C

–0.002 –2
mA
Gate Operating Current
c
I
G
V
DG
= 10 V, I
D
= 1 mA –20
Drain Cutoff Current I
D(off)
V
DS
= 10 V, V
GS
= –8 V 2
pA
Drain-Source On-Resistance r
DS(on)
V
GS
= 0 V, I
D
= 1 mA 150
W
Gate-Source Voltage V
GS
V

DS
= 15 V, I
D
= 200 mA
–0.5 –2.5 –7.5
Gate-Source Forward Voltage V
GS(F)
I
G
= 1 mA , V
DS
= 0 V 0.7
V
Dynamic
f = 1 kHz 2 5.5 6.5
Common-Source Forward Transconductance
c
g
fs
V
DS
= 15 V
V = 0 V
f = 100 MHz 1.6 5.5
mS
Common-Source Output Conductance
c
g
os
V

GS
= 0 V
f = 1 kHz 25 50
mS
Common-Source Input Capacitance C
iss
2.2 8
Common-Source Reverse Transfer Capacitance C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
0.7 4
pF
Equivalent Input Noise Voltage
c
e
n
V
DS
= 10 V, V
GS
= 0 V, f = 100 Hz 6
nV⁄
√Hz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH
b. Pulse test: PW v300 ms, duty cycle v2%.

c. This parameter not registered with JEDEC.
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
500
0 –10–6
300
0
100
60
0
r
DS
g
os
r
DS
@ I
D

=
1 mA, V
GS
= 0 V
g
os
@ V
DS

= 10 V, V
GS

= 0 V
f = 1 kHz
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
20
0 –10
0
10
0
I
DSS
g
fs
V
GS(off)
– Gate-Source Cutoff Voltage (V)
80
40
20
400
100
200
–2 –4 –8
V
GS(off)
– Gate-Source Cutoff Voltage (V)
6

8
4
2
–6–2 –4 –8
12
16
4
8
I
DSS
@ V
DS
= 15 V, V
GS

= 0 V
g
fs
@ V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
gos – Output Conductance (mS)
I
DSS
– Saturation Drain Current (mA)
r
DS(on)

– Drain-Source On-Resistance ( Ω )
g
fs
– Forward Transconductance (mS)
2N3819
Vishay Siliconix
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
www.vishay.com
7-3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
10
0
2
8
6
4
Gate Leakage Current
01020
5 mA
0.1 mA
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
0.1 pA

0.1 mA
I
GSS
@ 25_C
T
A
= 25_C
T
A
= 125_C
5 mA
I
GSS
@
125_C
Output Characteristics Output Characteristics
Common-Source Forward Transconductance
vs. Drain Current
0.1 1 10
10
2
0
V
GS
(off)
= –3 V
T
A
= –55_C
125_C

10
04 10
0
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.2 V
–1.0 V
V
GS
= 0 V
15
010
0
–0.6 V
–0.9 V
–1.2 V
–1.5 V
–1.8 V
V
GS
= 0 V
–0.3 V
V
DG

– Drain-Gate Voltage (V) I
D
– Drain Current (mA)

V
DS
– Drain-Source Voltage (V) V
DS
– Drain-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
Transfer Characteristics
V
GS(off
)
= –2 V
T
A
= –55_C
125_C
V
GS
– Gate-Source Voltage (V)
Transfer Characteristics
T
A
= –55_C
125_C
V
GS(off)
= –3 V
8
6

4
V
DS
= 10 V
f = 1 kHz
V
GS
(off)
= –2 V V
GS
(off)
= –3 V
2
8
6
4
268 4268
3
12
9
6
V
DS
= 10 V V
DS
= 10 V
10
0
2
8

6
4
0 –0.8 –20 –3–0.4 –1.2 –1.6 –1.2–0.6 –1.8 –2.4
1 mA
1 mA
25_C
25_C
25_C
–1.4 V
g
fs
– Forward Transconductance (mS)
I
G
– Gate Leakage
I
D

– Drain Current (mA)
I
D

– Drain Current (mA)I
D

– Drain Current (mA)
I
D

– Drain Current (mA)

2N3819
Vishay Siliconix
www.vishay.com
7-4
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
V
GS
– Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10
0 –0.8 –2
8
0
V
GS(off)
= –2 V
T
A
= –55_C
125_C
V
GS

– Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltgage
10

–3–0.60
0
T
A
= –55_C
125_C
V
GS(off)
= –3 V
I
D
– Drain Current (mA) I
D
– Drain Current (mA)
On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
0.1 1 10
300
0
T
A
= –55_C
–3 V
V
GS(off)
= –2 V
100.1
100
0
Assume V
DD

= 15 V, V
DS
= 5 V
R
L
+
10 V
I
D
V
GS(off)
= –2 V
–3 V
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
5
0 –20–4
0
f = 1 MHz
V
DS
= 0 V
V
DS
= 10 V
3.0
0 –20
0

V
DS
= 0 V
V
DS
= 10 V
V
GS
– Gate-Source Voltage (V) V
GS
– Gate-Source Voltage (V)
f = 1 MHz
V
DS
= 10 V
f = 1 kHz
V
DS
= 10 V
f = 1 kHz
6
4
2
240
180
120
60
8
6
4

2
80
60
40
20
1
–0.4 –1.6–1.2
–1.2 –1.8 –2.4
4
3
2
1
–8 –12 –16 –4 –8 –12 –16
2.4
1.8
1.2
0.6
A
V
+
g
fs
R
L
1 ) R
L
g
os
25_C
25_C

g
fs
– Forward Transconductance (mS)
g
fs
– Forward Transconductance (mS)
r
DS(on)
– Drain-Source On-Resistance ( Ω )
A
V
– Voltage Gain
C
iss

– Input Capacitance (pF)
C
rss

– Reverse Feedback Capacitance (pF)
2N3819
Vishay Siliconix
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
www.vishay.com
7-5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Reverse Admittance Output Admittance

Input Admittance Forward Admittance
100
10
1
0.1
100 1000
b
is
g
is
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
(mS)
100
10
1
0.1
100
T
A
= 25_C
V

DS
= 15 V
V
GS
= 0 V
Common Source
(mS)
–b
is
g
fs
10
1
0.1
0.01
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
–b
rs
–g
rs
10

1
0.1
0.01
T
A
= 25_C
V
DS
= 15 V
V
GS

= 0 V
Common Source
b
os
g
os
f – Frequency (MHz) f – Frequency (MHz)
f – Frequency (MHz)f – Frequency (MHz)
Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current
10 100 1 k 100 k10 k
20
0
I
D
= 5 mA
V
DS
= 10 V

20
0
0.1 1 10
T
A
= –55_C
125_C
V
GS(off)
= –3 V
I
D
– Drain Current (mA)f – Frequency (Hz)
(mS)
(mS)
200 500 1000200 500
100 1000 100200 500 1000200 500
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= –3 V
16
12
8
4
16
12

8
4
I
D
= I
DSS
25_C
en – Noise Voltage nV / Hz
g
os
– Output Conductance (mS)